Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/41991
標題: Filling mechanism in microvia metallization by copper electroplating
作者: Dow, W.P.
竇維平
Yen, M.Y.
Liao, S.Z.
Chiu, Y.D.
Huang, H.C.
關鍵字: copper electroplating
microvia
filling mechanism
convection-dependent
adsorption
in-situ
damascene electrodeposition
polyethylene-glycol
plating
formula
chloride-ion
additives
adsorption
cu
performance
inhibition
期刊/報告no:: Electrochimica Acta, Volume 53, Issue 28, Page(s) 8228-8237.
摘要: This work explores the mechanism of microvia filling by copper electroplating using a printed circuit board (PCB) with a specific pattern design. The microvias employed in this work had no sidewall copper layer. The outer and inner copper layers of these microvias that had no sidewall copper layer were together connected to the cathode during electroplating in order to clarify the mechanism of bottom-up filling. A plating formula that was composed Of CuSO4, H2SO4, polyethylene glycol (PEG), bis(3-sulfopropyl) disulfide (SPS), Cl- and Janus Green B (JGB) was employed as a model formula for studying the filling mechanism. The results showed that bottom-up filling stemmed from two crucial factors. One was the sidewall growth of the microvia, increasing the surface coverage of an accelerator; the other was the convection-dependent adsorption (CDA) of additives, leading to different copper deposition rates on the outer and inner copper layers. When a leveler was present in the plating solution, CDA behavior dominated the filling mechanism, regardless of whether a sidewall copper layer was present. On the other hand, the mechanism of coverage accumulation of the accelerator was dominant only when the microvia possessed a sidewall copper layer and no leveler was present in the plating solution. (C) 2008 Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11455/41991
ISSN: 0013-4686
文章連結: http://dx.doi.org/10.1016/j.electacta.2008.06.042
Appears in Collections:化學工程學系所

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.