Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/42001
標題: Copper Fill of Microvia Using a Thiol-Modified Cu Seed Layer and Various Levelers
作者: Dow, W.P.
竇維平
Li, C.C.
Lin, M.W.
Su, G.W.
Huang, C.C.
關鍵字: adsorbed layers
adsorption
copper
electrochemical electrodes
electrodeposits
electroplating
electrochemical impedance spectroscopy
self-assembled monolayers
organic additives
plating baths
disulfide adsorption
damascene
process
deposition bath
electrodeposition
performance
mechanism
期刊/報告no:: Journal of the Electrochemical Society, Volume 156, Issue 8, Page(s) D314-D320.
摘要: Microvia filling by copper electroplating was carried out using a plating bath containing a suppressor and a leveler without an accelerator. The required accelerator was adsorbed onto the copper seed layer of the microvia in a predipping bath before the filling plating. This pretreatment is similar to the self-assembled monolayer of thiol molecules that forms on a copper surface. The suppressor was poly(ethylene glycol) (PEG), and five levelers, namely, Janus green B, diazine black, methylene violet, safranine O, and Alcian blue, were employed to screen for the best plating formula suitable for a plating process in which no accelerator was present in the plating solution. The thiol molecule employed in this work was 3-mercapto-1-propanesulfonate (MPS). The electrochemical behaviors of various plating formulas were characterized using a galvanostatic measurement on a copper electrode at different rotating speeds. Results indicated that the MPS adlayer is transferable onto the surface of the copper deposit and can be displaced by the PEG-Cl-leveler. The displacement rate depends on the molecular structure of the added leveler. This plating process has the potential to greatly reduce the plating time of microvia filling.
URI: http://hdl.handle.net/11455/42001
ISSN: 0013-4651
文章連結: http://dx.doi.org/10.1149/1.3147273
Appears in Collections:化學工程學系所

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