Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/42001
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dc.contributor.authorDow, W.P.en_US
dc.contributor.author竇維平zh_TW
dc.contributor.authorLi, C.C.en_US
dc.contributor.authorLin, M.W.en_US
dc.contributor.authorSu, G.W.en_US
dc.contributor.authorHuang, C.C.en_US
dc.date2009zh_TW
dc.date.accessioned2014-06-06T08:06:05Z-
dc.date.available2014-06-06T08:06:05Z-
dc.identifier.issn0013-4651zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/42001-
dc.description.abstractMicrovia filling by copper electroplating was carried out using a plating bath containing a suppressor and a leveler without an accelerator. The required accelerator was adsorbed onto the copper seed layer of the microvia in a predipping bath before the filling plating. This pretreatment is similar to the self-assembled monolayer of thiol molecules that forms on a copper surface. The suppressor was poly(ethylene glycol) (PEG), and five levelers, namely, Janus green B, diazine black, methylene violet, safranine O, and Alcian blue, were employed to screen for the best plating formula suitable for a plating process in which no accelerator was present in the plating solution. The thiol molecule employed in this work was 3-mercapto-1-propanesulfonate (MPS). The electrochemical behaviors of various plating formulas were characterized using a galvanostatic measurement on a copper electrode at different rotating speeds. Results indicated that the MPS adlayer is transferable onto the surface of the copper deposit and can be displaced by the PEG-Cl-leveler. The displacement rate depends on the molecular structure of the added leveler. This plating process has the potential to greatly reduce the plating time of microvia filling.en_US
dc.language.isoen_USzh_TW
dc.relationJournal of the Electrochemical Societyen_US
dc.relation.ispartofseriesJournal of the Electrochemical Society, Volume 156, Issue 8, Page(s) D314-D320.en_US
dc.relation.urihttp://dx.doi.org/10.1149/1.3147273en_US
dc.subjectadsorbed layersen_US
dc.subjectadsorptionen_US
dc.subjectcopperen_US
dc.subjectelectrochemical electrodesen_US
dc.subjectelectrodepositsen_US
dc.subjectelectroplatingen_US
dc.subjectelectrochemical impedance spectroscopyen_US
dc.subjectself-assembled monolayersen_US
dc.subjectorganic additivesen_US
dc.subjectplating bathsen_US
dc.subjectdisulfide adsorptionen_US
dc.subjectdamasceneen_US
dc.subjectprocessen_US
dc.subjectdeposition bathen_US
dc.subjectelectrodepositionen_US
dc.subjectperformanceen_US
dc.subjectmechanismen_US
dc.titleCopper Fill of Microvia Using a Thiol-Modified Cu Seed Layer and Various Levelersen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1149/1.3147273zh_TW
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