請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/42049
標題: GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography
作者: Horng, R.H.
洪瑞華
Yang, C.C.
Wu, J.Y.
Huang, S.H.
Lee, C.E.
Wuu, D.S.
武東星
吳震裕
關鍵字: external quantum efficiency
ohmic contacts
induced damage
surface
期刊/報告no:: Applied Physics Letters, Volume 86, Issue 22.
摘要: There is a significant gap between the internal and external efficiencies of conventional GaN light-emitting diodes (LEDs). The reason for this shortfall is the narrow escape cone for light in high refractive index semiconductors. In this letter, the p-side- up GaN/sapphire LEDs with surface textured indium tin oxide (ITO) widow layers were investigated using natural lithography with polystyrene spheres as the etching mask. Under optimum etching conditions, the surface roughness of the ITO film can reach 140 nm while the polystyrene sphere on the textured ITO surface is maintained at about 250 - 300 nm in diameter. The output power of the ITO/GaN LED with and without surface texturing is 10.9, and 8.5 mW at 20 mA, respectively. The LEDs fabricated using the surface-textured ITO produced an output power that exceeded that of the planar-surface LED by about 28% at 20 mA. (c) 2005 American Institute of Physics.
URI: http://hdl.handle.net/11455/42049
ISSN: 0003-6951
文章連結: http://dx.doi.org/10.1063/1.1940723
顯示於類別:化學工程學系所

文件中的檔案:
沒有與此文件相關的檔案。


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。