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標題: 氮化銦鎵太陽能電池之研製與特性分析
Fabrication and Characteristic of InGaN Solar Cells
作者: 林師婷
Lin, Shih-Tyng
關鍵字: InGaN
solar cell
wafer bonding
laser lift-off
出版社: 精密工程學系所
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摘要: 本論文主要研究氮化銦鎵太陽電池之製程建立,並且探討不同主動層(In1-xGaxN)厚度和不同銦含量組成對於p-i-n結構之氮化銦鎵太陽能電池特性之影響。 元件中不同的主動層厚度會有不同的光吸收量,較厚雖然可增加光吸收量,但相對地串聯電阻、暗電流等特性皆會因厚度增加而增加,上述幾點都會影響太陽電池的轉換效率。 為了增加主動層對光的吸收我們利用雷射剝離技術把藍寶石基板移除,並利用晶圓鍵合技術將p-i-n結構之磊晶膜轉移至具有高反射鏡面之矽基板上,此具鏡面之基板有助於增加主動層(In1-xGaxN)對於光的吸收。經由基板轉置之元件使用標準太陽模擬光源量測系統(AM1.5,one sun)量測效率結果發現,此元件之電流密度由0.31 mA/cm2 增加為0.52 mA/cm2,電流密度相對提昇68%,而效率由0.51%提昇至0.80%。由此發現,此具鏡面之矽基板結構的確有利於氮化銦鎵太陽能電池。
This study is focused to fabricate Indium-Gallium-Nitride (InGaN) solar cells and investigated the effects of different thickness of active layer (In1-xGaxN) and different composition of Indium on the characteristics of p-i-n type solar cell. The layer thickness is an issue of the output electrical characteristics of device. A thicker active layer will absorb more incidents light, but too thick active layer will result in increasing in both series resistance and dark current, which will degenerate the performance of the device. In order to enhance the light absorption for the thin active layer of InGaN solar cell, the InGaN solar cell on sapphire was fabricated by laser lift-off technique to remove sapphire and then transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure can enhance light absorption for InGaN solar cell with a thin absorption layer. After the epilayer transfer, upon illuminating by standard solar simulator measurement system (one sun, 25oC, AM1.5G, 100 mW/cm2), it is found the current density of solar cell was improved from 0.31 mA/cm2 to 0.52 mA/cm2, the device exhibits an enhancement factor of 68% in current density and an increment in conversion efficiency from 0.51 % to 0.80%. It is attributed that this structure really has advantage to enhance the light absorption for solar cell application.
其他識別: U0005-0308200913335000
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