Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4223
標題: 具金屬基板之薄膜型氮化鎵發光二極體之研製
Investigation of Thin-Film GaN Light-Emitting Diodes with Metal Substrates
作者: 李君聖
Li, Jun-Sheng
關鍵字: Thin film GaN
薄膜氮化鎵
electroplating
wafer bonding
laser lift-off
精密電鍍
晶圓接合
雷射剝離技術
出版社: 精密工程學系所
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摘要: 論文主要將高散熱之金屬銅基板應用於薄膜型氮化鎵發光二極體(Thin-film GaN LED),藉由精密電鍍技術(Electroplating)與晶圓接合技術(Wafer bonding)製作一具有金屬銅基板之薄膜氮化鎵發光二極體,搭配反射率達92 %之鎳/銀(Ni/Ag)鏡面及雷射剝離技術(Laser lift-off, LLO),目的為製作一高亮度與高散熱特性之薄膜氮化鎵發光二極體。目前一般製作具銅基板之垂直式發光二極體多採用精密電鍍製程,本論文嘗試使用晶圓接合銅基板方式,欲證明晶圓接合銅基板應用於薄膜氮化鎵發光二極體製程之可行性。最後將使用紅外線熱影像分析儀與暫態熱阻分析儀探討其在熱特性上與電鍍銅基板與傳統發光二極體有何差異性。 電性方面,在小電流20 mA注入下,薄膜氮化鎵結構之電鍍銅基板、晶圓接合銅基板與傳統水平結構之操作電壓均為2.8 V左右;當大電流350 mA注入下,三者皆為3.5 V。在-5 V操作電壓下,三者的漏電流均小於1 uA之標準。光特性方面,在350 mA注入下,電鍍銅基板、晶圓接合銅基板與傳統水平結構之光輸出功率分別為134 mW、83.4 mW與30.0 mW;電光轉換效率分別為10.7 %、6.7 %與2.4 %。在熱特性方面,以紅外線熱影像分析此三種元件晶片表面溫度,分別為電鍍銅基板43.5 ℃、晶圓接合銅基板45.8 ℃及傳統水平結構47.5 ℃;以暫態熱阻量測分析儀測得各元件之整體熱阻值為電鍍銅基板11.1 K/W、晶圓接合銅基板13.2 K/W及傳統水平結構19 K/W。
In this study, a vertical conductive structure of thin-film GaN light emitting diode(LED) was prepared by high thermal conductivity copper substrate, laser lift-off (LLO), Ni/Ag mirror with high reflectivity (about 92%), electroplating and wafer bonding technique are demonstrated. In general, vertical type GaN LEDs with high thermal conductive copper substrate were fabricated by electroplating technique. In this thesis, a thin-film GaN LED with copper substrate was also fabricated by wafer bonding process. The forward voltage (@20 mA) of the electroplating copper substrate LEDs, wafer bonding copper substrate LED and conventional LEDs were 2.79 V, 2.80V and 2.82 V, respectively. The forward voltage (@350 mA) of the electroplating copper substrate LEDs, wafer bonding copper substrate LED and conventional LEDs were 3.55 V, 3.60 V and 3.52 V, respectively. The leakage currents (@-5 V) of these devices were also smaller then 1 uA. The output power of electroplating and wafer bonding copper substrate LED were about 4.0 and 2.6 times compared with conventional LEDs. The characteristic of thermal conductivity can be obtained by IR and T3ster system measurement. The surface temperature for electroplating, wafer bonding and conventional device were 43.5 ℃, 45.8 ℃ and 47.5 ℃, respectively, whereas the thermal resistance were 11.1 K/W, 13.2 K/W and 19 K/W, respectively.
URI: http://hdl.handle.net/11455/4223
其他識別: U0005-1808200923101500
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1808200923101500
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