Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4237
標題: 溼蝕刻n-侷限層以提昇磷化鋁銦鎵發光二極體外部量子效率之研究
Investigation of Improving External Quantum Efficiency of AlGaInP-Based LEDs by Wet-Etching n-Cladding Layer
作者: 王嘉宏
Wang, Chia-Hong
關鍵字: surface-textured
表面粗化
AlGaInP LED
磷化鋁銦鎵發光二極體
出版社: 精密工程學系所
引用: [1] IEK產業情報網, “ ieknet.itri.org.tw” [2] K.Streubel, N.Linder, R.Wirth, and A.Jaeger, “High Brightness AlGaInP Light-Emitting Diodes”, IEEE. vol. 8, pp. 321-332 (2002). [3] G.C.Chi, Y.K.Su, M.J.Jou, W.C.Hung, “Window layer for current spreading in AlGaInP light-emitting diode”, J. Apply. Phys.76, pp. 2603-2611 (1994) [4] M.R.Krames, M.Ochinai-Holocomb, G.E.Hofler, C.Carter-Coman, E.I.Chen, I.H.Tan, P.Grillot, N.F.Gardner, H.C.Chui, J.W.Huang, S.A.Stockman, F.A.Kish and M.G.Craford, “High-power truncated-inverted-pyramic ( ) In P/GaP light-emitting diode exhibiting > 50% external quantum efficiency ”, Apply. Phys. Lett., vol. 75, pp. 2365-2367 (1999) [5] Y.J.Lee, T.C.Lu, H.C.Kuo, S.C.Wang, T.C.Hsu, M.H.Hsieh, M.J.Jou, B.J.Lee, “Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency”, Material Science and engineering, vol 138, pp.157-160 (2007) [6] Y.J.Lee, H.C.Kuo, S.C.Wang, T.C.Hsu, M.H.Hsieh, M.J.Jou and B.J.Lee , “Increasing the Extraction Efficiency of AlGaInP LEDs via n-Side Surface Roughening”, IEEE. vol. 17, pp. 2289-2291 (2005). [7] L.J.Yan, J.K.Sheu, W.C.Wen, T.F.Liao, M.J.Tsai, C.S.Chang, “Improved Light Extraction Efficiency in AlGaInP Light-Emitting Diode by Applying a Periodic Texture on the Surface”, IEEE. vol. 20, pp. 1724-1726 (2008). [8] Hung-Wen Huang, Chih-Chiang Kao, Tao-Hung Hsueh, Chang-Chin Yu, Chia-Feng Lin, Jung-Tang Chu, Hao-Chung Kuo and Shing-Chung Wang, “Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching”, Material Science and engineering, vol. 113, pp. 125-129 (2004) [9] H.W.Deckman and J.H.Dunsmuir, “Natural lighography”, Apply. Phys. Lett., vol. 41, pp. 377-379 (1982) [10] F.A.Kish, F.M.Sterakna, D.C.Defevere, D.A.Vanderwater, K.Park, C.P.Kuo, T.D.Osentowski, M.J.Peanasky, J.G.Yu, R.M.Fletcher, D.A.Steigerwald and M.G.Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate ( ) In P/GaP light-emitting diodes”, Appl. Phys. Lett., vol. 64, pp. 2839-2841 (1994) [11] Th.Gessmann and E.F.Schubert, “High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications”, J. Apply. Phys.95, pp. 2203-2216(2004) [12] J.W.Lee, S.J.Pearton, C.R.Abernathy, W.S.Hobson, F.Ren and C.S.Wu, “Investigation of wet etching soulution for In Ga P”, Material Science and engineering, vol 38, pp.1871-11874 (1995) [13] M.J.Cich, J.A.Johnson, G.M.Peake and O.B.Spahn, “Crystallographic dependence of the lateral undercut wet etching rate of InGaP in HCl”, Appl. Phys. Lett., vol. 82, pp. 651-653 (2003). [14] J.van Deelen, P.Mulder, G.J.Bauhuis, A.T.J.van Niftrik, E.J.Haverkamp, J.J.Schermer and P.K. Larsen, “Study of Wet Chemical Etching of InP films Using Hydrochloric Acid”, Journal of The Electrochemical Society, vol. 153, pp. C442-C448 (2006). [15]史光國, “現代半導體發光及雷射二極體材料技術,” 全華科技, (2001) [16] 陳隆建, “發光二極体之原理與製程”,全華科技,(2006)初版. [17] S.C.Hsu, D-S.Wuu, C.-Y.Lee, J.-Y.Su and R-H.Horng, “High-efficiency 1-mm AlGaInP LEDs sandwiched by ITO omni-directional reflector and current-spreading layer”, IEEE. vol. 19, pp. 492-494 (2007). [18] 積體電路IC電漿蝕刻 [19] 光連雙月刋 48期“溼蝕刻製程介紹暨機台原理簡介”(2003) [20] 黃建富,“磷化鋁鎵銦高亮度發光二極體表面週期性結構對於外部量子效率提昇之設計,模擬,製作與量測”,p.p.62-70 , 民國九十四年,國立台灣大學應用力學所碩士論文。
摘要: 高功率磷化鋁銦鎵(AlGaInP)發光二極體(LEDs)已經被廣泛應用,雖然磷化鋁銦鎵(AlGaInP)的材料已經發展好幾年了,其內部量子效率也達90%以上,但由於材料光學特性限制其外部量子效率仍然很低。本次論文則是利用溼式蝕刻的技術,對AlGaInP LEDs進行其n型侷限層之表面粗化,提昇LEDs外部出光效率,於此情況下可降低LEDs內部產生光的全反射之機率,於1mm x 1mm晶粒具有自然性化學蝕刻之粗化晶粒,注入350mA電壓為2.1V下,亮度提升了40%。 研究自然性化學蝕刻粗化對AlGaInP的光電特性之影響,發現當以自然性化學蝕刻粗化LEDs表面,注入電流350mA時,電壓為2.1V,其亮度較週期性3um圖形粗化LEDs之亮度提升了10%,而相較於未粗化的表面,則提升40%~50%,可知此些粗化製程並不影響LEDs電流及電壓特性,且將元件進行96小時500mA老化壽命的可靠度測試,粗化表面LEDs元件的亮度和順向電壓未超過基本值的20%範圍。
High-performance AlGaInP-based light emitting diodes (LEDs) were widely used, although the AlGaInP-based material has been developed for many years and its internal quantum efficiency has approached above 90%. However, the external quantum efficiency of AlGaInP is still low due to the optical properties limitation. In this research, we use the technology of wet chemical etching to roughen the n-cladding layer AlGaInP to enhance the light extraction efficiency of light-emitting diode. It is effectively extracting the emitting light which is generated from LED's active layer and reduced the total internal reflection. Under the 350mA injection current, the forward voltage of 1mm x 1mm LED with random roughness is about 2.1V and the emitting light is enhanced to 40%. Investigating the optical and electrical properties of AlGaInP-based LEDs, the LEDs with naturally wet chemical etching surface present 2.1V forward voltage under 350mA current injection. Moreover, it was found that the brightness can be enhanced 10% and 40%~50% as compared with those of LEDs with and without periodic texturing surface, respectively. It is worthy to mention that the texturing processes can not destroy the electrical properties of LEDs. As concerning the reliability of LEDs with surface roughness, the life test was measured under 500mA and 96hr. The variation of brightness and forward voltage is under 20%.
URI: http://hdl.handle.net/11455/4237
其他識別: U0005-2808200909592900
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2808200909592900
Appears in Collections:精密工程研究所

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.