Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4240
標題: 高精度多通道光纖之平行定位模仁製程
Process development of high precision multiple -channel optical fibers in parallel alignment mold inserts
作者: 林格年
Lin, Ge-Nian
關鍵字: V-groove
V型溝槽
anisotropic etch
photolithography
Fiber array
非等向性蝕刻
黃光微影
光纖陣列
出版社: 精密工程學系所
引用: 1.G. T. A. Kavacs, N. I. Maluf, and K.E.Peterson, “Bulk Micromachining of Silicon, ” Proceedings of the IEEE, Vol.86, pp. 1536-1551,1998. 2.W. L., “Silicon microstructuring technology,” Materials Science and Engineering,R-reports, Vol.17, NO.1, pp1-55, 1996. 3.G. T. A. Kavacs, K. Peterson, M. Albin, “Silicon Micromachining Sensors to Systems,” Analytical Chemistry News & Features, pp.407-412, 1996. 4. K. E. Peterson, “Dynamic Micromechanics on Silicon: Techniques and Devices,” IEEE Transactions on Electron devices, Vol 25, No.10, pp.1241-1250, 1978. 5. A. Oz, and G. K. Fedder, “Surface micromachining for microsensors and microactuators,” Journal of Vacuum Science Technology B, no.6, pp.1809-1813, 1988. 7.E. W. Becker, W. Ehrfeld, P. Hagmann, A. Maner, and Muenchmeyer, D., “Fabrication of microstructures with high aspect ratio and great structural heights by synchrotron radiation lithography, galvanoforming, and plastic moulding (LIGA processes)," Microelectronic Engineering, vol. 4, pp. 35-56, 1986. 8. B. Schwartz and H. R. Robbins., “Chemical etching of silicon-IV. Etching technology. ” J. Electrochem. Soc. Vol. 123, No. 12, pp. 1903-1909, 1976. 9. A. F. Bogenschutz, W. Krusemark, K.H. Locherer, and W. Mussinger. “Activation energies in the chemical etching if semiconductors in HNO3-HF-CH3COOH. ” J. Electrochem. Soc. Solid State, Vol. 114, No. 9, pp. 970-973, 1997. 10. J. A. Chediak, Z. Luoa, J. Seo, N. Cheungc, L. P. Lee and T. D. Sandse, “Heterogeneous Integration of CdS Filters with GaN LEDs for Fluorescence Detection Microsystems, ” Sensors and Actuators A, vol.111, no.1, pp. 1-7, 2004. 11. J.H. Lee, S.R. Park, S.H. Yang, Y.S. Kim, “Fabrication of a V-groove on the optical fiber connector using a miniaturized machine tool,” Journal of Materials Processing Technology, vol. 155, pp. 1716–1722, 2004. 12. I. F. Cuestaa, R. B. Nielsen, Al. Boltasseva, X. Borrisé, and F. P. Murano, “ V-groove plasmonic waveguides fabricated by nanoimprint lithography,” J. Vac. Sci. Technol. B, vol. 25, no. 6, pp. 2649-2653, 2007. 13. X. Yu, B. Zhang, J. Guo, H. Yang, Y. Zhang, and S. Shen, “Fabrication of continuous V-grooves with Si(110) sidewalls using TiO2 resist mask by anisotropic wet etching,” J. Micro/Nanolith. MEMS MOEMS, vol. 8, no. 1, pp. 0130121-0130125, 2009. 14.K. Arimoto, G. Kawaguchi, K. Shimizu, M. Watanabe, J. Yamanaka, K. Nakagawa, N. kaUsami, K. Nakajima, K. Sawano, Y. Shiraki, “Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates,” Journal of Crystal Growth, vol. 311, pp. 814-818, 2009. 15. M. Madou, ”Fundamentals of Microfabrication,” CRC Press LLC, 1997. 16. D. Zielke, J. Fruhaüf, ”Determination of Rates for Orientation-Dependent Etching,” Sensors and Actuators, vol. 48, pp. 51-156, 1995. 17. K Tokoro, D Uchikawa, M Shikida, K Sato., “Anisotropic Etching Properties of Silicon in KOH and TMAH Solutions,” IEEE International Symposium on Micromechatronics and Human Science, pp. 65-69, 1998. 18. G. Ensell, “Alignment of Mask Patterns to Crystal Orientation, “Sensors and Actuators, ” A, vol.53, pp. 345-348, 1996. 19.黃淳權,微機電概論,高立圖書有限公司,2000。 20.莊達人,VLSI 製造技術,高立圖書出版,2001。 21.W. K. Choi, J. T. L. Luo, P. Tan, C. M. Chua, T. H. and Y. Bai, "Characterisation of Pyramid Formation Arising from the TMAH Etching of Silicon," Sensors and Actuators A, 71, pp. 238-243, 1998. 22. S. S. Tan, M. L. Reed, H. Han and R. Boudreau, "Mechanisms of Etch Hillock Formation," Journal of Microelectromechanical Systems, vol. 5, no.1, pp. 66-72, 1996. 23. 國科會精儀中心,微機電系統技術與應用,2003。 24. T. A. Kovacs, N. I. Maluf and K. E. Peretsen, "Bulk Micromachining of Silicon," Proceedings of The IEEE, vol. 86, no. 8, pp. 1536-1551, 1998. 25.J.B.Price,”Anisotropic of Silicon with KOH-H2O-IPA,” in Semiconductor Silicon, ed. H. R. Burgess, N. J. Princeton, Electrochemical Socety Proceedings, pp. 339, 1973. 26. citation:Ghandhi, “VLSI Fabrication Principles,” p. 461 27. 李宗哲, 光纖式微型生醫檢測之螢光激發平台研究,國立中興大學精密工程所碩士論文, 2005 28. 陳建州, 非等向性蝕刻製程於矽基板之應用:翻鑄模仁與矽基板 V 型凹槽,國立中山大學機械工程研究所碩士論文 , 2001 29. 王群智, 使用動態光罩微影技術於單層製作3D微小元件之研究,國立台灣科技大學機械工程研究所碩士論文,2005 [30] 誠品光電 http://www.v-optech.com/
摘要: 本研究之主要目的在於多通道光纖平行定位模仁製程的研究。主要利用晶格(100)之晶圓做為基材,並以非等向性蝕刻技術,製成光纖定位用之V型溝槽,以取代現有利用研磨加工製成V-groove之技術。本研究主要選用二氧化矽、氮化矽作為蝕刻之保護材料,並利用微影方式定義出蝕刻圖案區域,並以光罩之透光區為蝕刻區域,再利用KOH進行單晶矽之非等向蝕刻。本研究期能找出最適當之蝕刻溶液的濃度、溫度、時間等條件,並計算出蝕刻之速率與蝕刻之深度,以完成V-groove之微結構加工。本研究主要以32通道之光纖定位塊做為研究標的。研究結果導入電鑄翻模製程,誤差率達0.3%。未來可大量複製高精度多通道光纖定位模塊,藉此以達到降低製造成本且可滿足光通訊產業之需求。
The purpose of this study is to develop multi-channel molds for optical fiber alignment with high precision. High selective wet-etching process to fabricate multi-channel grooves for fiber alignment on Si(100) was used. It has the potential advantage to replace the conventional grinding process for v-groove production. The (100)-oriented Si wafers were used as starting substrates and then epitaxied with silicon dioxide or silicon nitride. Furthermore, samples were patterned (using photoresist), which the protected region was silicon dioxide or silicon nitride while the v-groove can be formed in the unprotected region after removal of passivation layer and KOH etching. Silicon anisotropic etching can result the desired V-grooves in silicon.Optimal etching conditions, including the etchant concentration, temperature and time can determine the etching rate and etching depth for V-groove producing micro-structures. The number of fiber channel can be defined from the mask design. Fiber channels of 32 will be the final research target. That can convert into metal molds by electroforming process, decrease the error rate under 0.3%. The implementation of a large number of multi-channel optical fiber positioning replication modules, with high precision, to reduce costs and demand for optical communication industry will be feasible.
URI: http://hdl.handle.net/11455/4240
其他識別: U0005-0107201012233400
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-0107201012233400
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