Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4249
標題: 脈衝雷射沉積摻鋁氧化鋅透明導電膜及其在發光二極體之應用
Pulsed laser deposition of AZO transparent conducting films for LED applications
作者: 劉淑萍
Liu, Shu-Ping
關鍵字: Al doped zinc oxide
摻鋁氧化鋅
Pulsed Laser Deposition
GaN
LED
脈衝雷射沉積法
氮化鎵
發光二極體
出版社: 精密工程學系所
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摘要: 本研究利用脈衝雷射沉積法在藍寶石基板上成長摻鋁氧化鋅(AZO)透明導電薄膜。靶材為3吋之氧化鋅-2wt%氧化鋁。本研究探討成長氣氛包括氧氣和氬氣及基板沉積溫度對薄膜結晶特性、光學特性以及導電特性三者造成的影響及其相關性。本研究使用X光繞射儀及穿透式電子顯微鏡作為晶體結構分析;霍爾效應量測儀量測電性;X光電子能譜儀量測AZO薄膜之元素成份及N&K系統量測光學性質。實驗中發現,在控制低溫約100℃及氬氣條件下,可獲得c軸(002)優選取向之透明導電膜,且電阻率性最低可達2.33×10-4 Ω-cm,載子遷移率為38.8cm2/V-S,載子濃度為6.88×1020 /cm3的摻鋁之氧化鋅薄膜,其穿透率在可見光範圍(400-700 nm)可達90 %以上,且因為有藍移的現象,使得AZO薄膜在紫外光波長範圍有很好的透光性。由變溫霍爾量測可知在氬氣環境下可得到似金屬特性的AZO薄膜以及具半導體特性的AZO薄膜。 利用此似金屬特性的AZO薄膜之高可見光及紫外光波長範圍良好的透光性,本研究首先將此AZO薄膜應用於藍光發光二極體上,生長不同厚度之AZO薄膜於發光二極體,結果發現將AZO增厚之後,不僅可以降低電流擴散層的片電阻,使其電流擴散的作用變得更好,並降低p-GaN/TCL間的位障,同時可藉由其優良的光學性質,增加發光二極體的出光。最後將此最佳厚度之AZO薄膜應用於紫外光發光二極體上,其紫外光發光二極體同樣有很大的發光亮度。
URI: http://hdl.handle.net/11455/4249
其他識別: U0005-1102201117314600
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1102201117314600
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