Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4252
標題: 圖案化藍寶石晶體蝕刻面對氮化鎵發光 二極體特性影響之研究
Effect of Crystallography-Etched Facets of Patterned Sapphire Substrates on Performance of GaN-Based LEDs
作者: 林威廷
Lin, Wei-Ting
關鍵字: GaN
氮化鎵
wet-etching
light-extraction efficiency
PSS
濕蝕刻
光取出率
圖案化藍寶石
出版社: 精密工程學系所
引用: 參考文獻 [1] K. H. Kim, Z. Y. Fan, M. Khizar, M. L. Nakarmi, J. Y. Lin, and H.X. Jiang, “AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers”, Appl. Phys. Lett., vol, 85, p. 4777, 2004. [2] Shuji Nakamura, “In situ monitoring of GaN growth using interference effects”, Jpn. J. Appl. Phys. vol.30, p.1620, 1991. [3] B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P.Denbaars and J. S. Speck, “Role of threading dislocation structure onthe x-ray diffraction peak widths in epitaxial GaN films”, Appl. Phys. Lett., vol. 68, 643,1996. [4] Lett., vol. 68, 643 (1996).D. C. Look, and R. J. Molnar, “Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements “, Appl. Phys.Lett., vol . 70, p. 3377, 1997. [5] F. Huet, M. A. di, F. Poisson, A. Romann, M. Tordjman, J. D. Persio, and B. Pecz, “Modelling the defect structure in GaN MOCVD thin films by X-ray diffraction”, J. Cryst. Growth.,vol. 98, p. 209, 1989. [6] Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities” , Appl. Phys. Lett., vol. 94, p. 4777, 2004. [7] D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN–GaN LEDs grown on patterned sapphire substrates”, IEEE Photon. Technol. Lett., vol. 14, p. 450, 2002. [8] H. P. Maraska, D. A. Stevenson, and J. I. Pankove, “Violet luminescence of Mg-doped GaN”, Appl. Phys. Lett. vol. 22, p.303, 1973. [9] S. Nakamura, M. Senoh and T. Mukai, “Highly p-typed Mg-doped GaN films grown with GaN buffer layers”, Jpn. J. Appl. Phy., vol. 30,p. 1708, 1991. [10] S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, “Thermal annealing effects on p-type Mg-doped GaN films”, Jpn. J. Appl. Phys.vol. 31, p. 139, 1992. [11] T. Shibata, H. Sone, K. Yahashi, M. Yamaguchi, K. Hiramatsu, N. Sawaki, and N. Itoh, “Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth”, J. Cryst. Growth, vol. 189, p. 67, 1998. [12] P. Fini, L. Zhao, B. Moran, H. Marchand, J. P. Ibbetson, M. Hansen, S. P. DenBaars, U. K. Mishra, and J. S. Speck , “High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers” , Appl. Phys. Lett., vol. 75, p. 1706, 1999. [13] W. K. Wang, D. S. Wuu, W. C. Shih, J. S. Fang, C. E. Lee, W. Y. Lin, P. Han, R. H. Horng, T. C. Hsu, T.C. Huo, M. J. Jou, A. Lin and Y. H. Yu, “Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates” , Jpn. J. Appl. Phys., vol. 44, p. 2512, 2005. [14] D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, and C. F. Lin, R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template”, Appl. Phys. Lett., vol. 89, p. 161105, 2006. [15] W. K. Wang, D. S. Wuu, S. H. Lin, S.Y. Huang, K. S. Wen and R. H. Horng, “Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates”, J. Phys. Chem. Solids, vol. 69, p.714, 2008. [16] D. S. Wuu, H. W. Wu, S. T. Chen, T. Y. Tsai, X. H. Zheng and R. H. Horng, “Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates ”, J. Cryst. Growth, vol. 311, p. 327, 2009. [17] H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, “Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale”, J. Appl. Phys., vol. 103, p.014314, 2008. [18] J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire ”, Appl. Phys. Lett., vol. 96, p. 051109, 2010. [19] C. Y. Hwang, Ph. D. Mechenics, and Materials Sciance, Rutgers University, Piscataway, NJ, 1995. [20] P. Bhattacharya, Semiconductor optoelectric devices, Prentice Hall., New Jersey,1996 [21] K. N. Tu, J. W. Mayer, and L. C. Feldman, “I electronic thin film science: for electrical engineers and materials scientists, Pearson Education POD, p. 355, 1996. [22] C. D. Thurmond, and R. A. Logan, “The equilibrium pressure of N2 over GaN," J. Electrochem. Soc. vol.119, p.622 , 1972. [23] S. Nakamura, “InGaN/Gan/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours”, MRS Bulletin vol.23, p.37, 1998. [24] S. Nakamura, and G. Fasol, “The blue laser diode”, Springer Berlin, p.15, 1997. [25] D. Hull, and D. J. Bacon, “Introduction to dislocations”, (Pergamon Press, Oxford.), p.234, 1989. [26] X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, and J. S. Speck, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells”, Appl. Phys. Lett., vol. 72, p. 692, 1998. [27] S. Keller, G. Parish, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Dislocation reduction in GaN films through selective island growth of InGaN”, Appl. Phys. Lett. vol.77, p.2665, 2000. [28] M. Kneissl, D. P. Bour, L. Romano, C. G. Van de Walle, J. E. Northrup,W. S. Wong, D. W. Treat, M. Teepe, Tanya Schmidt, and Noble M.Johnson, “Performance and degradation of continuous-wave InGaNmultiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates”, Appl. Phys. Lett. vol.77, p.1931, 2000. [29] H. K. Cho, and J. Y. Lee, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density”, Appl. Phys. Lett. vol.79, p.251, 2001. [30] H. K. Cho, and J. Y. Lee, “Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition”, J. Appl. Phys. vol.91, p.1104, 2002. [31] T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M.Ikeda, “Characterization of threading dislocations in GaN epitaxial layers”, Appl. Phys. Lett. vol.76, p.3421, 2000. [32] D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, and P. Kozodoy, S. P. Den Baars, U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy”, Appl. Phys. Lett. vol.71, p.1204, 1997.
摘要: 為了降低差排密度與提升光取出率,本論文主要利用黃光微影技術配合濕蝕刻製程製作圖案化藍寶石基板。我們在光罩上設計不同大小與間距的圖案來分析藍寶石基板圖案大小與間距對於元件光強度的影響。圖案大小與間距將影響濕蝕刻後藍寶石基板總表面積,藍寶石基板表面積的增加將能增加光萃取率而濕蝕刻產生之晶體蝕刻面能降低氮化鎵磊晶膜差排密度。因此嘗試製作一種晶體蝕刻面最大化的圖案化藍寶石基板,並對其磊晶膜進行品質與特性分析。 我們得到圖案化藍寶石基板氮化鎵磊晶膜最佳rocking curve半高寬值於對稱面(002)面為283 arcsec,非對稱面(102)面為274 arcsec。在350mA電流注入下圖案化藍寶石發光二極體比一般藍寶石發光二極體光輸出功率提升約40%,光強度提升約108%。此提升除了因為缺陷密度下降使得內部量子效率提升,另一方面也因為晶體蝕刻面能有效提高其光取出效率。藉由穿透式電子顯微鏡,發現氮化鎵磊晶膜內部差排彎曲集中並形成規則性排列,這是氮化鎵磊晶膜品質改善的證明。
In this thesis, in order to decrease the threading dislocation density (TDD) and enhance the light extraction efficiency, we used the photolithography technology and wet-etching process to fabricate patterned sapphire substrates. We design the mask pattern with different size and spacing and to investigate the effect of different patterned sapphire substrate on light intensity. It was found that the mask pattern size and spacing will affect the c-plane ratio. Sapphire surface area will increase the rate of increase in light extraction. Crystallography-etched facets can reduce the dislocation density. So we try to design a kind of patterned sapphire substrate. The best full width at half maximum (FWHM) of GaN rocking curve symmetric (002) and asymmetric (102) are 283 and 274 arcsec, respectively. Under a 350mA current injection current, the output power of the stripe patterned sapphire subtrate LED is enhanced by 40% and light intensity increased about 108% as compared with that of the conventional LED. These results indicated that the decreased dislocation density could enhance the internal quantum efficiency and the Crystal lography-etched facets could improve the light extraction efficiency. By transmission electron microscopy(TEM) we found the dislocations bending and regular arrangement of the formation, which proved to improve the quality of GaN epitaxial films.
URI: http://hdl.handle.net/11455/4252
其他識別: U0005-1402201109140500
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1402201109140500
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