請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/4260
標題: 以化學蝕刻剝離技術進行具金屬基板之薄膜型氮化鎵發光二極體轉移基板之研製
Investigation of Transferring the Thin Film GaN LED Epi-structure to Metal Substrates by Chemical Lift-off Technology
作者: 顏呈穎
Yen, Cheng-Ying
關鍵字: GaN
氮化鎵
Light emitting diode(LED)
sacrificial layer
chemical lift-off(CLO)
metal substrate
發光二極體
犧牲層
化學蝕刻剝離
金屬基板
出版社: 精密工程學系所
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摘要: 本論文提出一新穎製程,在藍寶石基板與氮化鎵薄膜間建立一寬度3μm之條狀二氧化矽之圖案化犧牲層,配合化學蝕刻剝離技術,將氮化鎵薄膜轉移至具有高熱傳導率的金屬銅基板上,並與一般直接成長於藍寶石基板之傳統水平製程發光二極體及以雷射剝離技術製作之垂直導通發光二極體做比較。 我們分別比較未經翻轉製程、雷射剝離技術與化學蝕刻剝離技術製作之氮化鎵磊晶膜的差異,以X光繞射光譜儀驗證其薄膜的差異性,雷射剝離技術與化學蝕刻剝離技術之X光繞射光譜(002)面半高寬分別為310、315及317 arcsec,故可驗證化學蝕刻剝離技術應用於薄膜氮化鎵發光二極體製程之可行性。 元件光電特性方面,電流20 mA注入下,傳統水平結構與雷射剝離技術、化學蝕刻剝離技術製作之垂直導通結構之操作電壓分別為3.15 V、2.37 V與2.21 V。當大電流350 mA注入下,發光強度分別為1281.0 mcd、1909.3 mcd及1826.3 mcd;而水平結構與雷射剝離技術、化學蝕刻剝離技術製作之垂直導通結構之之光輸出功率分別為45.7 mW、105.4 mW與98.3 mW。熱特性方面,紅外線熱影像分析此三種元件晶片表面溫度,傳統水平結構53.5 °C、雷射剝離技術與化學蝕刻剝離技術製作之垂直導通分別為42.4 °C及43.8 ℃,顯示氮化鎵薄膜經由基板轉移至導熱係數極佳的金屬銅後,可以得到較佳的散熱機制,較大電流操作下仍可維持良好的特性及穩定性。
This thesis presents the novel technique to perform chemical lift-off (CLO) GaN epilayer from sapphire substrate to copper substrate by 3-μm-width SiO2 narrow strips as sacrificial layer. The full LED structure was fabricated on both regular sapphire and the sapphire with 3-μm-width SiO2 narrow strips for evaluating the CLO feasibility in this work. It was found that the full width at half maximum of epilayers diffraction peaks measured by x-ray diffraction system is 315, 317 and 310 arcsec for the GaN epilayer grown on sapphire, free standing by laser and chemical lift-off (LLO) and CLO, respectively. It suggests that CLO process could not damage the crystalline quality of GaN epilayer. As concerning the device performance, the forward voltages (@20 mA) of original, LLO and CLO LEDs are 3.15 V, 2.37 V and 2.21 V, respectively. The corresponding series resistances are 82.57 Ω, 62.71 Ω and 53.70 Ω, respectively. At 350 mA, the luminous intensity of original, LLO and CLO LEDs is 1281.0 mcd、1909.3 mcd and 1826.3 mcd. The output power of original, LLO and CLO LEDs are respectively 45.7 mW, 105.4 mW and 98.3 mW. These results indeed verifie the feasibility of implementing chemical lift-off technique with the sacrificial layer of 3-μm-width SiO2 narrow strips. The surface temperatures for original, LLO and CLO LEDs are 53.5 °C, 42.4 °C and 43.8 °C, respectively. It is due to the copper providing a good conductivity and heat sink.
URI: http://hdl.handle.net/11455/4260
其他識別: U0005-2308201015570600
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2308201015570600
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