Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4268
標題: 使用聚對二甲苯基材研製軟性非晶矽薄膜太陽電池
Fabrication of Flexible a-Si Thin-Film Solar Cells on Parylene Substrates
作者: 張家豪
Chang, Chia-Hao
關鍵字: flexible
非晶矽薄膜太陽電池
a-Si thin-film solar cell
HF-PECVD
parylene
barrier layer
direct Separation
高頻率電漿化學輔助沉積
聚對二甲苯
氣體阻隔層
直接分離技術
出版社: 精密工程學系所
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摘要: 軟性非晶矽薄膜太陽電池是利用高頻率電漿化學輔助沉積系統(27.13 MHz) 沉積非晶矽薄膜太陽電池在高穿透率聚對二甲苯基板所得,為了改善高分子聚對二甲苯基板的表面形態,利用了Ar, N2和O2氣電漿和退火製程對基板做預處理,降低了聚對二甲苯基板表面粗糙度和增加聚對二甲苯基板的光透明度,為了讓對聚對二甲苯基板穿透度變佳和降低水氣穿透率影響,我們鍍製了單層以及多層無機薄膜氮化矽和氧化矽之氣體阻隔層當作緩衝層在聚對二甲苯基板上。當非晶矽薄膜太陽能電池製程完成後,利用直接分離技術從玻璃基板上可得到軟性非晶矽薄膜太陽電池。其軟性非晶矽薄膜太陽電池轉換效率為5.78 %、開路電壓為0.74 V、短路電流密度為15.69 mA/cm2、填充因子為54.98 %。經過五千次撓曲測試後量測效率後可得到開路電壓為0.71 V、短路電流密度為14.96 mA/cm2、填充因子為50.7 %及轉換效率為4.94 %之軟性非晶矽薄膜太陽電池。此結果有助於日後將非晶矽薄膜太陽能電池應用於軟性電子元件上。
A free-standing flexible amorphous silicon (a-Si) thin-film solar cell was fabricated by high-frequency (27.13 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD) system on a high-transmittance parylene substrate. To improve the surface state of polymer substrates, Ar, N2, and O2 plasma-treated and annealed parylene substrates have been investigated for reducing parylene surface roughness and increasing the optical transmittance. Single and multilayer inorganic barrier layers as a buffer layer have been coated on parylene substrates. These buffer layers have different optical characteristics of incident sun light and can decrease the water vapor transmission rate. After the fabrication process of a-Si solar cells finished, a direct separation process was performed to obtain a free-standing flexible a-Si thin-film solar cell. The performance of the free-standing flexible a-Si thin-film solar cell was measured. The results showed that the free-standing solar cell has open-circuit voltage (Voc) of 0.74 V, short-circuit current density (Jsc) of 15.69 mA/cm2, fill factor (FF) of 54.98 %, and the conversion efficiency of 5.78 %. Moreover, after a cyclic bending test for 5000 times, the Voc of 0.71 V, Jsc of 14.96 mA/cm2, FF of 50.7 %, and the conversion efficiency of 4.94 % could be obtained. These are very encouraging results for future fabrication of a-Si thin-film solar cells by using flexible electron devices.
URI: http://hdl.handle.net/11455/4268
其他識別: U0005-2508201014494100
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2508201014494100
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