Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4283
標題: 不同指向性LED封裝最佳化之光學設計與模擬
Optical Design and Simulation Optimization for Various Directivity LED Package
作者: 林宏儒
Lin, Hong-Ru
關鍵字: LED封裝
LED package
光形
半功率全角
輸出功率
radiation pattern
FWHM angle
output power
出版社: 精密工程學系所
引用: [1] 孫培真,黃建晁,&quot;新世代節能環保照明-白光LED&quot;,生活科技教育月刊,民國94年。 [2] 蘇炎坤,林俊良,&quot;白光發光二極體之發展&quot;,EDMA電子資訊九卷二期-光電技術專刊,54-66,2003。 [3] 郭浩中、賴芳儀、郭守義,&quot;LED原理與應用&quot;,五南圖書出版,2009。 [4] H. J. Round, &quot;A note on carborundum&quot;, Electrical world, Vol.49, No.6, 309, 1907. [5] G. Destriau, &quot;AC electroluminesence in ZnS&quot;, J. Chimie Phys., Vol.33, 587, 1936. [6] N. Holonyak, Jr., S. F. Bevacqua, &quot;Coherent (Visible) Light Emission fromGa(As1-xPx) Junctions&quot;, Appl. Phys. Lett., Vol.1, 82-83, 1962. [7] C. J. Nuese, J. J. Tietjen, J. J. Gannon, H. F. Gossenberger, &quot;Optimization of Electroluminescent Efficiencies for Vapor-Grown GaAs1−xPx Diodes&quot;, J. Electrochem. Soc., Vol.116, Issue2, 248-253 1969. [8] J. I. Pankove, E. A. Miller, D. Richman, J. E. Berkeyheiser, &quot;Electroluminescence in GaN&quot;, J. of Luminescence, Vol.4, 63-66, 1971. [9] C. W. Tang, S. A.Van Slyke, &quot;Organic Electroluminescent Diodes &quot;, Appl. Phys. Lett., Vol.51, 913–915, 1987. [10] J. H. Burroughes, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burns, A. B. Holmes, &quot;Light-emitting diodes based on conjugated polymers&quot;, Nature, Vol.347, 539-541, 1990. [11] C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G., Craford, V. M. Robbins, &quot;High performance AlInGaP visible light emitting diodes&quot;, Appl. Phys. Lett., Vol.57, 2937-2939, 1990. [12] H. Sugawara, M. Ishikawa, G. Hatakoshi, &quot;High-efficiency InAlGaP/GaAs visible light-emitting diodes&quot;, Appl Phys. Lett., Vol. 58, 1010-1012, 1991. [13] H. Amano, N. Sawaki, I. Akasaki, T. Toyoda, &quot;Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer&quot;, Appl. Phys. Lett., Vol.48, 353-355, 1986. [14] Y. Koide, N. Itoh, K. Itoh, N. Sawaki, I. Akasaki, &quot;Effect of AlN buffer layer on AlGaN/a-Al2O3 heterepitaxial growth by metalorganic vapor phase epitaxy&quot;, Jpn. J. Appl. Phys., Vol.27, 1156-1161, 1988. [15] I. Akasaki, H. Amano, Y. Koide, K. Kiramatsu, N. Sawaki, &quot;Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properites of GaN and Ga1-xAlxN (0<x0.4) films grown on sapphire substrates by MOVPE&quot;, J. Crystal Growth, Vol.98, 209-219, 1989. [16] I. Akasaki, H. Amano, K. Hiramatsu, N. Sawaki, &quot;High efficiency blue LED utilizing GaN film with AlN buffer layer grown by MOVPE&quot;, Inst. Phys. Conf. Ser., No.91, 633-636, 1988. [17] H. Amano, M.Kito, K. Hiramatsu, and I. Akasaki, &quot;p-type conduction in Mg-doped GaN treated with low-energy elecron beam irradiation&quot;, Jpn. J. Appl. Phys., Vol.28, L2112-L2114, 1989. [18] S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Mukai, &quot;Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes&quot;, Jpn. J. Appl. Phys. Vol.34, L1332-L1335, 1995. [19] S. NaKamura, T. Mukai, and M. Senoh, &quot;High-brightness InGaN/AlGaNdouble-heterostructure blue-green-light-emitting diodes&quot;, J. Appl. Phys. 76, 8180-8191, 1994. [20] 陳俊郎,&quot;LED封裝與在內部量子效率的評估之研究&quot;,國立中央大學光電科學研究所碩士論文,民國96年 [21] D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, S. L. Rudaz, &quot;Illumination with solid state lighting technology&quot;, IEEE J. Select.Topics Quantum Electron., Vol.8, 310-320, 2002. [22] E. Learner, &quot;Solid-state illumination is on the horizon, but challenges remain&quot;, Laser Focus World, November 2002. [23] H. C. Hsu, C. J. Wang, H. R. Lin, P. Han, &quot;Optimized semi-sphere lens design for high power LED package&quot;, Microelectronics Reliability, Vol.52, Issue5, 894-899, 2012 [24] C. C. Sun, W. T. Chien, I. Moreno, C. C. Hsieh, and Y. C. Lo, &quot;Analysis of the far-field region of LEDs&quot;, OPTICS EXPRESS., Vol.17, No.16, 2009. [25] David K. Cheng, &quot;Field and Wave Electromagnatics&quot;, Addison Wesley, 2nd edition. [26] B. E. A.Saleh, M. C. Teich, &quot;Fundamentals of Photonics&quot;, Wesley-interscience, 2nd edition, 2007. [27] Eugene Hecht, &quot;Optics&quot;, Addison Wesley,4th edition, 2002. [28] SPEOS 2005 User’s guide. [29] 維基百科,http://en.wikipedia.org/wiki/File:BSDF05_800.png [30] 蔡國猷,&quot;發光二極體基礎技術&quot;,建興出版社,1992。 [31] 小山稔,奧野保男,柏原鳳一郎 執筆,柏瑞芳 譯,&quot;發光二極體及其應用&quot;,工業技術研究院工業材料研究所,1991。 [32] 史光國,&quot;半導體LED及固態照明&quot;,全華科技圖書股份有限公司出版,2005。
摘要: 近年來由於環保及節能意識日漸抬頭,歐美日等先進國家逐漸重視這議題,其中LED具有省電、無汞汙染等優點,可以用來取代傳統的白熾燈及日光燈,因此提升LED的效率為大家努力的方向。 本論文使用光學模擬軟體SPEOS進行光學的設計及模擬,利用改變LED封裝的幾何形狀去控制LED的光形,再進行尺寸的最佳化,讓LED的輸出功率達到最高。在LED光形半功率全角為120度、100度、80度和60度時,分別可以提高LED的輸出功率10.97%、9.95%、7.49%和4.39%;透過封裝尺寸的優化,可以提高LED的光萃取效率,達成提高LED效率的目的。
The developed nations lately emphasize the concepts of energy saving and environmental protection; Therefore LED gains saving much attention due to its advantages, such as no mercury pollution and low power consumption. Still the key issue is to improve the lighting efficiency. This thesis using optical design and simulation software called SPEOS to model the various directivity LED lamps and optimize their geometrical parameters to extract maximum output power. It is shown that for FWHM (Fall Width Half Maximum) angle equal to 120 degree, 100 degree, 80 degree, 60 degree, the improvement of power is 10.97%, 9.95%, 7.49%, 4.39% respectively. Using the methods which optimize the geometrical parameters can achieve our goal.
URI: http://hdl.handle.net/11455/4283
其他識別: U0005-2007201217182900
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2007201217182900
Appears in Collections:精密工程研究所

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