Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4307
標題: 微拉伸試驗探討次微米尺度效應下之氮化鉭薄膜疲勞機械性質
Thickness effects on fatigue behavior of submicron scale tantalum nitride thin films
作者: 周耀章
Chow, Eu-Chong
關鍵字: 氮化鉭
tantalum nitride
微拉伸
楊氏係數
疲勞
平均應力
振幅
microtensile
young’s modulus
fatigue
出版社: 精密工程學系所
引用: [1]Stella Q. Hong, Craig M. Comrie, Stephen W. Russell, and James W. Mayer, “Phase formation in Cu-Si and Cu-Ge”, Journal of Applied Physics 70, 3655 (1991). [2]Vee S.C. Len, R.E. Hurley, N. McCusker, D.W. McNeill, B.M. Armstrong, H.S. Gamble, “An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures”, Solid-State Electronics 43 (1999) 1045-1049. [3]Hong Xiao, “Introduction to Semiconductor Manufacturing Technology”, Copyright (2001), Published by arrangement with the original publisher, Pearson Education, Inc., Publishing as PRENTICE HALL, INC. [4]M. Fayolle, J. Torres, G. Passemard, F. Fusalba, G.Fanget, D. Louis, M. Assous, O. Louveau, M. Rivoire, K. Haxaire, M. Mourier, S. Maitrejean, P. Besson, L. Broussous, L. Arnaud, H. Feldis, “Integration of Cu,SiOC in Cu dual damascene interconnect for 0.1-um technology”, Microelectronic Engineering 64 (2002) 35-42. [5]Michael Quirk, Julian Serda, “Semiconductor Manufacturing Technology”, Copyright (2001), Published by arrangement with the original publisher, Pearson Education, Inc., Publishing as PRENTICE HALL, INC. [6]M. -A. Nicolet, “Diffusion Barriers In Thin Films” Thin Solid Films, 52 (1978) 415-443. [7]H. Ono, T. Nakano and T. Ohta, “Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W)”, Appl. Phys. Lett. 64, 1511 (1994). [8]J. S. Reid, E. Kolawa, R. P. Ruiz and M.-A. Nicolet, “Evaluation of amorphous (Mo, Ta, W)-Si-N diffusion barriers for Si Cu metallizations”, Thin Solid Films, 236(1993). [9]J. P. Manaud, A. Poulon, S. Gomez, Y. Le Peticorps, “A comparative study of CrN, ZrN, NbN and TaN layers as cobalt diffusion barriers for CVD diamond deposition on WC-Co tools”, Surface & Coatings Technology 202 (2007) 222-231. [10]Takeo Oku, Eiji Kawakami, Masaki Uekubo, Katsumi Takahiro, Sadae Yamaguchi, Masanori Murakami, “Diffusion barrier property of TaN between Si and Cu”, Applied Surface Science 99 (1996) 265-272 [11]Marc Wittmer “TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices” Appl. Phys. Lett. 36(6), 15 March 1980, American Institute of Physics. [12]Takahiro Kouno, Hideo Niwa, and Masao Yamada “Effect of TiN Microstructure on diffusion barrier properties in Cu metallization” J. Electrochem. Soc., Vol. 145, No. 6, June 1998. [13]Xin Sun, Elzbieta Kolawa, Jen-Sue Chen, Jason S. Reid and Marc-A. Nicolet, “Properties of reactively sputter-deposited Ta-N thin films”, Thin Solid Films, 236 (1993) 347-351. [14]Nguyen Duy Cuong, Dong-Jin Kim, Byoung-Don Kang, Chang Soo Kim, Kwang-Min Yu, and Soon-Gil Yoon “Characterization of Tantalum Nitride Thin Films Deposited on SiO2/Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors”Journal of The Electrochemical Society, 153(2)G164-G167(2006). [15]Karen Holloway, Peter M. Fryer, Cyril Cabral, Jr., J. M. E. Harper, P. J. Bailey,and K. H. Kelleher “Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions” (Received 30 September 1991; accepted for publication 12 February 1992) [16]童麒嘉,許凱翔,林明澤 “設計非破壞性拉伸方法量測薄膜機械行為”科儀新知第二十九卷第四期97.2 [17]Jwo-Huei Jou and Li Hsu, “Stress analysis of elastically anisotropic bilayer structures”, J. Appl. Phys. 69 (3) (1991). [18]Qizhou Yao and Jianmin Qu, “Effect of thermal residual stresses on the apparent interfacial fracture toughness of polymer/metal interface”, 1999 Electronic components and Technology Conference. [19]Au CL, Anderson WA, Schmitz DA, Flassayer JC, Collins FM, “Stability of tantalum nitride thin film resistors”, J. Mater. Res. 1990, 5:1224-32 [20]K. Yuan-Zhu, Y. Jun and O. Qin, Surf. Coat. Technol. 82 (1995) 259 [21]N. R. Moody, D. Medlin, D. Boehme, D. P. Norwood, “Film thickness effects on the fracture of tantalum nitride on aluminum nitride thin film systems”, Engineering Fracture Mechanics 1997 [22]Ranjana Saha, John A. Barnard, “Effect of structure on the mechanical properties of Ta and Ta(N) thin films prepared by reactive DC magnetron sputtering”, Journal of Crystal Growth 174 (1997) [23]C. -S. Shin, D. Gall, P. Desjardins, A. Vailionis, H. Kim, I. Petrov, and J. E. Greene, “Growth and physical properties of epitaxial metastable cubic TaN(001)”, Applied Physics Letters 1999 [24]柯賢文編著“表面與薄膜處理技術”全華科技圖書股份有限公司出版。 [25]W. C. Oliver, G. M. Pharr “An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments” J. Mater. Res., Vol. 7, No. 6. June 1992 Materials Research Society [26]http://parts.jpl.nasa.gov/docs/ [27]Shoji Kamiya, Jan H. Kuypers, Achim Trautmann, Patrick Ruther, “Process temperature-dependent mechanical properties of polysilicon measured using a novel tensile test structure”, Journal Of Microelectromechanical System, VOL. 16, NO.2, April 2007. [28]Joao Gaspar, Marek E. Schmidt, Jochen Held, and Oliver Paul “Wafer-scale microtensile testing of thin films”, Journal Of Microelectromechanical System, VOL. 18, NO.5, October 2009. [29]M. A. Haque and Saif, M. T. A. “In Situ Tensile Testing of nano-scale Specimens in SEM and TEM” Experimental Mechanics, 42(1), pp. 123-128 (2001). [30]Ming-Tzer Lin, Chi-Jia Tong, Chung-Hsun Chiang “Design and development of sub-micron scale specimens with electroplated structure for the microtensile testing of thin films” Springer-Verlag 2006 [31]Ming-Tzer Lin A Chi-Jia Tong A Kai-Shiang Shiu, “Monotonic and fatigue testing of freestanding submicron thin beams application for MEMS”, Springer-Verlag 2007. [32]Ming-Tzer Lin, PhD Dissertation, Lehigh University, (2003). [33]王大倫譯者“實用電鍍學”徐氏基金會出版
摘要: 氮化鉭薄膜的試件是使用半導體的製程步驟,如沉積、濺鍍、黃光、微影、微電鍍以及蝕刻等等,經過層層的堆疊製作而成。並且搭配微拉伸系統對三種厚度為300奈米、500奈米、800奈米的氮化鉭薄膜施加一微負載進行微拉伸試驗,藉由量測氮化鉭薄膜的機械行為,且利用此方式探討氮化鉭薄膜的機械性質,如應力-應變曲線、楊氏系數、最大應力破壞值以及疲勞等等。 而疲勞試驗也是以三種厚度為300奈米、500奈米、800奈米的氮化鉭薄膜,在不同平均應力與振幅固定為250MPa下所量測疲勞週期數,探討不同厚度的氮化鉭薄膜的疲勞週期變化,藉此可預測元件的可靠度。
Tantalum nitride thin film is fabrication by using semiconductor, which include deposition, sputtering, photolithography, and etching. Three different thicknesses 300nm, 500nm, 800nm of tantalum nitride thin film are test by micro-tensile system. So we can know the mechanical behavior of tantalum nitride thin film such as its stress-strain curve diagram, young’s modulus, and max stress. Besides, we also did fatigue test to measure the value of fatigue of tantalum nitride thin films. Those samples were tested on different mean stress and same amplitude of 250 MPa. By this test, we can discuss three different thicknesses tantalum nitride thin film impact on its fatigue cycle and assess the reliability of IC components.
URI: http://hdl.handle.net/11455/4307
其他識別: U0005-2308201216412900
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2308201216412900
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