請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43232
標題: Analyses of interface adhesion between Cu and SiCN etch stop layers by nanoindentation and nanoscratch tests
作者: Chang, S.Y.
張守一
Lee, Y.S.
關鍵字: interconnect
bonding
interface
adhesion
nanoindentation
nanoscratch
dielectric-constant films
thin-films
mechanical-properties
electrochemical deposition
copper metallization
fracture-toughness
scratch adhesion
indentation
reliability
coatings
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 46, Issue 4B, Page(s) 1955-1960.
摘要: The interface chemistry and adhesion strength between Cu and SiCN etch stop layers have been investigated to evaluate the reliability of interconnect structures. Analyses of the chemical compositions and bonding configurations reveal that the SiCN etch stop layer was mostly composed of Si to N and Si to C bonding, including Si-N, Si-CN2, and Si-C2N. At the Cu/SiCN interface, an oxide layer was observed, and SiCN-O and Cu-O bonding was detected. In nanoindentation and nanoscratch tests, Cu/SiCN interface delamination occurred around indents and along scratch tracks, and the adhesion energy between Cu and SiCN layers was accordingly measured and calculated. The adhesion energy of the Cu/SiCN interface was measured to be about 4.98 J/m(2) in the nanoindentation test, while that measured using the nanoscratch test was lower, at about 0.98 J/m(2). The 'mode mixity" effect was responsible for the difference between the adhesion energies obtained using these two methods.
URI: http://hdl.handle.net/11455/43232
ISSN: 0021-4922
文章連結: http://dx.doi.org/10.1143/jjap.46.1955
顯示於類別:材料科學與工程學系

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