請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43233
標題: 4-nm thick multilayer structure of multi-component (AlCrRuTaTiZr)N-x as robust diffusion barrier for Cu interconnects
作者: Chang, S.Y.
張守一
Li, C.E.
Chiang, S.C.
Huang, Y.C.
關鍵字: Diffusion barrier
Multi-component
Multilayer
atomic layer deposition
copper metallization
principal elements
film
performance
metals
alloys
tan
si
期刊/報告no:: Journal of Alloys and Compounds, Volume 515, Page(s) 4-7.
摘要: This work develops a multilayer structure of alternating (AlCrRuTaTiZr)N-0.5 senary nitride and AlCrRuTaTiZr senary alloy with a total thickness of only 4 nm as a diffusion barrier layer for application to Cu interconnects. Under annealing at a high temperature of 800 degrees C, the interdiffusion of Cu and Si through the multilayer structure was effectively retarded without the formation of any Cu silicides. Interdiffusion occurred only at 900 degrees C, and compounds that included Cu3Si were thus formed. This finding suggests that the high endurance temperature of the diffusion barrier is probably attributable to the stable amorphous solid-solution structure, the high packing factor, the severe lattice distortions that are caused by the incorporation of multiple components and the elongated diffusion path through the multilayer stacking structure. (C) 2011 Elsevier B. V. All rights reserved.
URI: http://hdl.handle.net/11455/43233
ISSN: 0925-8388
文章連結: http://dx.doi.org/10.1016/j.jallcom.2011.11.082
顯示於類別:材料科學與工程學系

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