請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43251
標題: Analyses of interface adhesion between porous SiOCH low-k film and SiCN layers by nanoindentation and nanoscratch tests
作者: Chang, S.Y.
張守一
Tsai, H.C.
Chang, J.Y.
Lin, S.J.
Chang, Y.S.
關鍵字: dielectrics
interface adhesion
nanoindentation
nanoscratch
dielectric-constant materials
thin-films
mechanical-properties
thermal-stability
scratch adhesion
indentation
toughness
hardness
期刊/報告no:: Thin Solid Films, Volume 516, Issue 16, Page(s) 5334-5338.
摘要: In this study, an Si/PEOX/SiCN/SiOCH/SiCN multilayered film stack has been prepared by chemical vapor deposition. The bonding configurations between porous SiOCH film and SiCN etch stop layers have been analyzed by X-ray photoelectron spectroscopy, and the interface adhesion has been investigated by nanoindentation and nanoscratch tests. Elements of Si, C, N, and O constructed an interlayer region of about 10 nm with mixing bonds of Si to C, Si to N and Si to O at the interface between the porous SiOCH film and SiCN layers. During nanoindentation and nanoscratch tests, interface delamination occurred between SiOCH and SiCN layers due to the accumulation of sufficient shear stresses around the indented regions. The interface adhesion energy was accordingly measured as 1.68 J/m(2) by nanoindentation test with an applied load of 30 mN. With higher applied loads, the measured interface adhesion energy decreased. By the nanoscratch test, the interface adhesion energy was measured as about 0.91 J/m(2), lower than that obtained by nanoindentation test due to the mode mixity effect. (C) 2007 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43251
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2007.07.043
顯示於類別:材料科學與工程學系

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