Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43271
標題: Optothermal property and decomposition characteristics of PtOx ultrathin film sandwiched between ZnS-SiO2 for super-resolution near-field recording
作者: Her, Y.C.
何永鈞
Liao, B.Y.
Hsu, W.C.
Tsai, S.Y.
關鍵字: optothermal
decomposition
PtOx
ultrathin mask layer
super-RENS
platinum dioxide films
signal characteristics
thermal-decomposition
structure disk
oxide-films
thin-films
growth
system
layers
期刊/報告no:: Journal of Nanoscience and Nanotechnology, Volume 7, Issue 1, Page(s) 374-380.
摘要: We have investigated the optothermal property and decomposition characteristics of PtOx ultrathin film protected by ZnS-SiO2 layers and effects of the constituent phases of PtOx, on super-resolution capability and read stability of the super-RENS disk. All the ZnS-SiO2/PtOx/ZnS-SiO2 multilayers exhibited a steep reflectivity drop at the temperature range between 265 and 350 degrees C, corresponding to the decomposition of PtOx. The decomposition temperature of the 4-nm-thick PtOx ultrathin film protected by ZnS-SiO2 layers was much lower than those obtained in thick PtO, films without protection. The activation energy for thermal decomposition was similar to 1.3 eV. Both the decomposition temperature and activation energy for thermal decomposition were unaffected by the constituent phases of PtO,. Carrier to noise ratios (CNR) of over 40 dB for mark size of 150 nm were achieved in all super-resolution near-field structure (super-RENS) disks, while the super-resolution readout was limited to 2.5 x 10(3) similar to 4.5 x 10(4) cycles. The effect of constituent phases of PtOx on the super-resolution capability of super-RENS disk with a PtOx, mask layer was minimal. However, as the constituent phases of PtOx, mask layer transformed from a mixture of Pt and PtOx to pure PtOx and then to a mixture of PtO and PtO2, the readout stability of super-RENS disk increased dramatically since less heat was absorbed by the PtO, mask layer composed of PtOx and PtO2 during the readout process, prohibiting the diffusion of materials inside the bubble to the GeSbTe phase change layer.
URI: http://hdl.handle.net/11455/43271
ISSN: 1533-4880
文章連結: http://dx.doi.org/10.1166/jnn.2007.028
Appears in Collections:材料科學與工程學系

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