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|標題:||Epitaxial growth of BaTiO3 films on TiN/Si substrates by a hydrothermal-galvanic couple method|
|期刊/報告no：:||Applied Physics Letters, Volume 90, Issue 3.|
|摘要:||Highly (111)- and (200)-oriented cubic BaTiO3 films with dense and hemispherelike morphology have been synthesized on different oriented TiN-coated silicon substrates in barium contained concentrated alkaline solutions at temperatures below 100 degrees C. An unconventional hydrothermal technique combining a hydrothermal method with a galvanic couple setup was used to prepare the films. Resultant BaTiO3 films could grow easily and epitaxially on the TiN seeding layer over Si substrates. Compared to the conventional hydrothermal method, such a hydrothermal-galvanic couple technique could significantly enhance the growth rate of BaTiO3. (c) 2007 American Institute of Physics.|
|Appears in Collections:||材料科學與工程學系|
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