Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43411
標題: Dielectric properties of high-density-plasma fluorinated-silicate glass by doping nitrogen
作者: Wei, B.J.
呂福興
Cheng, Y.L.
Wang, Y.L.
Lu, F.H.
Shih, H.C.
關鍵字: fluorosilicate glass
stability
期刊/報告no:: Journal of Vacuum Science & Technology A, Volume 26, Issue 3, Page(s) 481-484.
摘要: Nitrogen-doped fluorinated-silicate-glass (N-FSG) films were prepared by adding N-2 gas to the SiH4/SiF4/O-2/Ar gas mixtures using high-density-plasma (HDP) chemical vapor deposition method. When N-2 is increasingly added, the fluorine concentration of the films increases and the dielectric constant decreases from 3.8 to 3.4. In addition, better gap-filling ability is obtained by adding N-2 due to a lowered deposition/(sputtering+etching) (D/S+E) ratio. Moreover, these films were stabilized by a decreased change in dielectric constant after thermal treatment; indicating a significant improvement in the thermal resistivity of the films. It is proposed that the improvement of stability is correlated with the reduction of unstable fluorine bonds in the N-FSG films. Furthermore, the thermal stability of the N-FSG films was also identified by Al wiring delamination check. After annealing, the blister was observed only in non-N-2 FSG film with 5.5% Si-F concentration, while no blisters or delamination were observed when N-2 is introduced into the FSG process. Therefore, the N-FSG film, deposited by HDP-chemical vapor deposition, was a good candidate for the interconnect dielectric application. (c) 2008 American Vacuum Society.
URI: http://hdl.handle.net/11455/43411
ISSN: 0734-2101
文章連結: http://dx.doi.org/10.1116/1.2905251
Appears in Collections:材料科學與工程學系

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.