請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43512
標題: An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process
作者: Lin, C.F.
林佳鋒
Dai, J.J.
Lin, M.S.
Chen, K.T.
Huang, W.C.
Lin, C.M.
Jiang, R.H.
Huang, Y.C.
關鍵字: gan
期刊/報告no:: Applied Physics Express, Volume 3, Issue 3.
摘要: InGaN-based light-emitting diodes (LEDs) grown on triangle-shaped patterned sapphire substrates were separated through a chemical lift-off process by laterally etching an AlN sacrificial layer at the GaN/sapphire substrate interface. After the epitaxial growth, an air-void structure was observed at the patterned region on the sapphire substrate that provided an empty space to increase the lateral etching rate of the AlN buffer layer. The lateral etching rate of the AlN buffer layer was calculated at 10 mu m/min for the 100-mu m-width LED chip that was lifted off from the sapphire substrate. A triangular-shaped hole structure and a hexagonal-shaped air-void structure were observed on the lift-off GaN surface that was transferred from the patterned sapphire substrate. Comparing to the LED/sapphire structure, a peak wavelength blueshift phenomenon of the micro-photoluminescence spectra was observed on the lifted off LED chip caused by the release of a compressive strain at the GaN/sapphire substrate interface. The chemical lift-off process was achieved by using an AlN buffer layer as a sacrificial layer in a hot potassium hydroxide solution. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11455/43512
ISSN: 1882-0778
文章連結: http://dx.doi.org/10.1143/apex.3.031001
顯示於類別:材料科學與工程學系

文件中的檔案:
沒有與此文件相關的檔案。


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。