Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43514
標題: Enhanced the Light Extraction Efficiency of an InGaN Light Emitting Diodes with an Embedded Rhombus-Like Air-Void Structure
作者: Dai, J.J.
林佳鋒
Lin, C.F.
Wang, G.M.
Lin, M.S.
期刊/報告no:: Applied Physics Express, Volume 3, Issue 7.
摘要: InGaN light-emitting diodes (LED) were grown on a truncated-triangle-striped patterned sapphire substrate. After growing a GaN layer on the patterned-sapphire substrate, it was observed that a higher lateral growth process formed a V-shaped-striped air-void structure. After a bottom-up N-face wet etching process on a GaN layer, the stable crystallographic etching planes were formed as the GaN{10 (1) over bar(1) over bar} planes. Treated LED structures had 65% light enhancements and smaller divergent angles. A rhombus-like air-void structure formed at GaN/patterned-sapphire interface provided a high light extraction process and a wet etching channel for a chemical lift-off process application. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11455/43514
ISSN: 1882-0778
文章連結: http://dx.doi.org/10.1143/apex.3.071002
Appears in Collections:材料科學與工程學系

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