請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43515
標題: Blue light-emitting diodes with a roughened backside fabricated by wet etching
作者: Lin, C.F.
林佳鋒
Lin, C.M.
Chen, K.T.
Huang, W.C.
Lin, M.S.
Dai, J.J.
Jiang, R.H.
Huang, Y.C.
Chang, C.Y.
關鍵字: buffer layers
etching
gallium compounds
III-V semiconductors
indium
compounds
laser materials processing
light emitting diodes
rough
surfaces
wide band gap semiconductors
gan
sidewall
nitride
surface
output
期刊/報告no:: Applied Physics Letters, Volume 95, Issue 20.
摘要: The InGaN-based light-emitting diodes (LEDs) with a roughened patterned backside on the N-face GaN surface were fabricated through a crystallographic etching process to increase light-extraction efficiency. After laser decomposition, laser scribing, and a lateral crystallographic wet etching process at the GaN/Al(2)O(3) interface, stable crystallographic etching planes were formed as the GaN {1011} planes that included an angle with the top GaN (0001) plane measured at 58 degrees. The GaN buffer layer acted as the sacrificial layer for the laser decomposition process and the lateral wet etching process with a 26 mu m/min etching rate. The LED with the inverted pyramidal N-face GaN surface close to the GaN/Al(2)O(3) interface has a larger light-scattering process than the conventional LED. The light-output power of the LED with the backside roughened surface had a 47% enhancement when measured in LED chip form.
URI: http://hdl.handle.net/11455/43515
ISSN: 0003-6951
文章連結: http://dx.doi.org/10.1063/1.3262968
顯示於類別:材料科學與工程學系

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