Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43516
標題: An AlN Sacrificial Buffer Layer Embedded into the InGaN Light Emitting Diodes for a Chemical Lateral Etching Process
作者: Lin, C.F.
林佳鋒
Dai, J.J.
Lin, M.S.
Chen, C.C.
關鍵字: nitride-based leds
lift-off
sidewall
surface
output
期刊/報告no:: Electrochemical and Solid State Letters, Volume 13, Issue 9, Page(s) II309-II312.
摘要: High chemical lateral etching rate at AlN buffer/sacrificial layer embedded into GaN/patterned-sapphire substrate of InGaN-based light emitting diode (LED) was achieved. An air-void structure was observed at a truncated triangular patterned sapphire that provided an empty space to increase the lateral etching rate of the AlN sacrificial layer. A 30 mu m wide lateral etched region was observed around the LED chip. After a chemical lateral wet-etching process on AlN sacrificial layer and a bottom-up N-face etching process on GaN epitaxial layer, the stable crystallographic etching planes were formed as GaN {10 (11) over bar} planes. The treated LED structure had a higher light-output power and a smaller divergent angle compared with conventional LED structure that had the potential application for the chemical lift-off process. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3456532] All rights reserved.
URI: http://hdl.handle.net/11455/43516
ISSN: 1099-0062
文章連結: http://dx.doi.org/10.1149/1.3456532
Appears in Collections:材料科學與工程學系

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