請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43517
標題: Green Light-Emitting Diodes with a Photoelectrochemically Treated Microhole-Array Pattern
作者: Lin, C.F.
林佳鋒
Lin, C.M.
Chen, K.T.
Lin, M.S.
Dai, J.J.
關鍵字: etching
gallium compounds
III-V semiconductors
indium compounds
light emitting diodes
magnesium
nanoporous materials
oxidation
photoelectrochemistry
silicon
wide band gap semiconductors
output
enhancement
leds
期刊/報告no:: Electrochemical and Solid State Letters, Volume 13, Issue 3, Page(s) H90-H93.
摘要: Green InGaN-based light-emitting diodes (LEDs) with roughened microhole-array (MHA) structures were fabricated through a dry etching process and a photoelectrochemical (PEC) process. The PEC process consisted of a bandgap-selective lateral etching process at the InGaN active layer, an N-face bottom-up crystallographic etching process at the bottom p-type GaN:Mg layer, and a PEC oxidation process at the n-type GaN:Si surface. The light output power of the MHA-LED and the photoelectrochemically treated microhole-array light-emitting diode (PMHA-LED) had 7 and 65% enhancement, respectively, compared to a conventional LED at a 20 mA operation current.
URI: http://hdl.handle.net/11455/43517
ISSN: 1099-0062
文章連結: http://dx.doi.org/10.1149/1.3280952
顯示於類別:材料科學與工程學系

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