請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43518
標題: InGaN-Based Light-Emitting Diodes with a Multiple-Air-Gap Layer
作者: Lin, C.F.
林佳鋒
Yang, C.C.
Lin, C.M.
Chen, K.T.
Hu, C.W.
Tsay, J.D.
關鍵字: quantum-wells
optical-properties
lifetime
期刊/報告no:: Electrochemical and Solid State Letters, Volume 12, Issue 10, Page(s) H365-H368.
摘要: InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) that have a multiple-air-gap (MAG) structure to increase light extraction efficiency and to reduce the piezoelectric field in an InGaN active layer are described. The LED structure was regrown on a GaN template layer that consists of the photoelectrochemical (PEC)-treated nanoporous GaN: Si layer with a bottom MAG structure and a top GaO(x) layer that acts as a self-assembled micromask for the epitaxial lateral overgrowth process. Electroluminescence (EL) spectra having a 5.0 nm blueshift phenomenon and a peak intensity of up to 52% enhancement in the MAG-LED compared to a standard light-emitting diode (ST-LED) at 20 mA operating current were obtained. The wavelength blueshift of the EL spectra, with an increasing injection current, in the MAG-LED (5.9 nm) was smaller than that in the ST-LED (8.1 nm). The wavelength blueshift of the micro-photoluminescence spectra, when varying the reverse-bias voltage from 0 to -13 V, was measured as 5.7 and 3.9 nm in the ST-LED and in the MAG-LED, respectively. A higher light extraction efficiency and a lower piezoelectric field in the InGaN wells were observed in the MAG-LED by inserting the PEC-treated MAG structure and a top GaO(x) layer. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3177452] All rights reserved.
URI: http://hdl.handle.net/11455/43518
ISSN: 1099-0062
文章連結: http://dx.doi.org/10.1149/1.3177452
顯示於類別:材料科學與工程學系

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