請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43519
標題: Blue Light-Emitting Diodes With an Embedded Native Gallium Oxide Pattern Structure
作者: Lin, C.F.
林佳鋒
Chen, K.T.
Huang, K.P.
關鍵字: Light-emitting diodes (LEDs)
optical device fabrication
oxidation
semiconductor device measurements
n-type gan
期刊/報告no:: Ieee Electron Device Letters, Volume 31, Issue 12, Page(s) 1431-1433.
摘要: InGaN-based light emitting diodes (LEDs) were embedded by an insulated disk-array gallium oxide (Ga(2)O(3)) pattern structure that was formed through a photoelectrochemical oxidation process on a GaN layer. A 4-mu m-diameter native Ga(2)O(3) pattern with a top air-void structure was observed in the lower undoped GaN layer acting as a lateral overgrowth mask and as a light scattering center. In the patterned-Ga(2)O(3) LED structure (PGO-LED), the light output power had an approximate 28% enhancement when compared to a conventional LED at 20 mA. In the PGO-LED structure, the lower piezoelectric field and the slightly higher internal quantum efficiency in the InGaN active layers were both measured through a bias-dependent and temperature-dependent microphotoluminescence measurement. The LED structure consists of Ga(2)O(3) disk-array patterns with top air-void structures that increase external quantum efficiency for nitride-based LED applications.
URI: http://hdl.handle.net/11455/43519
ISSN: 0741-3106
文章連結: http://dx.doi.org/10.1109/led.2010.2081341
顯示於類別:材料科學與工程學系

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