請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43520
標題: InGaN Light-Emitting Diodes With the Inverted Cone-Shaped Pillar Structures
作者: Lin, C.F.
林佳鋒
Lin, C.M.
Chen, K.T.
Dai, J.J.
Lin, M.S.
關鍵字: Light-emitting diode (LED)
optical-device fabrication
oxidation
semiconductor device measurements
期刊/報告no:: Ieee Electron Device Letters, Volume 31, Issue 5, Page(s) 458-460.
摘要: An InGaN-based light-emitting diode (LED) with an inverted cone-shaped pillar structure was fabricated through a plasma dry etching process and a photoelectrochemical (PEC) process. The undercut structure was fabricated through a bandgap-selective PEC etching process that occurred at the InGaN active layer. Then, the inverted cone-shaped pillar structure was formed through a bottom-up crystallographic etching process in a hot potassium hydroxide solution. The light-output power of the LED with an inverted cone-shaped pillar structure had a 42% enhancement compared with the standard LED without the pillar structure at a 20-mA operating current. A higher light intensity of the PEC-treated LED was observed around the mesa-edge region and the pillar structures as a result of a higher light-scattering process occurring at the inverted cone-shaped structure.
URI: http://hdl.handle.net/11455/43520
ISSN: 0741-3106
文章連結: http://dx.doi.org/10.1109/led.2010.2044362
顯示於類別:材料科學與工程學系

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