請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43521
標題: InGaN-Based Light-Emitting Diodes With Nanoporous Microhole Structures
作者: Lin, C.F.
林佳鋒
Chen, K.T.
Lin, C.M.
Yang, C.C.
關鍵字: Light-emitting diodes (LEDs)
optical device fabrication
oxidation
semiconductor device measurements
extraction efficiency
leds
期刊/報告no:: Ieee Electron Device Letters, Volume 30, Issue 10, Page(s) 1057-1059.
摘要: InGaN-based light-emitting diodes (LEDs) with nanoporous microhole array (NMA) structures were fabricated through photoelectrochemical wet oxidation and oxide-removing processes. The average size of the nanoporous structure at the microhole regions was measured at 60-80 nm. Forward voltages were measured at 3.47 and 3.68 V for a standard LED (ST-LED) and an NMA-LED, respectively, the latter caused by the higher contact resistance at the nanoporous GaN:Mg surface. The light output power of the NMA-LED had a 40.5% enhancement compared with the ST-LED on nonencapsulated LEDs in chip form. The higher light scattering process occurred at the NMA structure on the GaN: Mg surface and at the ringlike patterns on the GaN: Si structure. The results were a higher light extraction efficiency and a larger divergent angle in the NMA-LED.
URI: http://hdl.handle.net/11455/43521
ISSN: 0741-3106
文章連結: http://dx.doi.org/10.1109/led.2009.2028746
顯示於類別:材料科學與工程學系

文件中的檔案:
沒有與此文件相關的檔案。


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。