Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43522
標題: Fabrication of Mesa Shaped InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process
作者: Yang, C.C.
林佳鋒
Lin, C.F.
Chiang, J.H.
Liu, H.C.
Lin, C.M.
Fan, F.H.
Chang, C.Y.
關鍵字: Photoelectrochemical
mesa shaping process
InGaN-based light-emitting
diodes
cone-shaped-sidewall LED structure
nitride-based leds
p-type gan
extraction efficiency
surface
output
oxidation
sidewall
enhancement
devices
layers
期刊/報告no:: Journal of Electronic Materials, Volume 38, Issue 1, Page(s) 145-152.
摘要: InGaN-based light-emitting diodes (LEDs) were fabricated to have a higher light extraction through the photoelectrochemical (PEC) mesa shaping process. After the PEC selective wet oxidation and wet etching processes, stable and controllable crystallographic etching planes were formed as p-type GaN {1011} planes and n-type GaN {1010} planes included at an angle of 27 deg. The ever-present cone-shaped structure of a PEC-treated LED has a larger light scattering area and higher light extraction cones on the mesa sidewall, as analyzed by microphotoluminescence and light output power measurement. This cone-shaped-sidewall LED has a higher light output power and a larger divergence angle compared with a conventional LED measured in an LED chip form.
URI: http://hdl.handle.net/11455/43522
ISSN: 0361-5235
文章連結: http://dx.doi.org/10.1007/s11664-008-0581-6
Appears in Collections:材料科學與工程學系

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