請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43523
標題: Higher Light-Extraction Efficiency of Nitride-Based Light-Emitting Diodes with Hexagonal Inverted Pyramids Structures
作者: Yang, C.C.
林佳鋒
Lin, C.F.
Liu, H.C.
Lin, C.M.
Jiang, R.H.
Chen, K.T.
Chien, J.F.
關鍵字: photonic crystal
p-gan
enhancement
output
improvement
sidewall
power
leds
期刊/報告no:: Journal of the Electrochemical Society, Volume 156, Issue 5, Page(s) H316-H319.
摘要: Self-assembled hexagonal inverted pyramid (HIP) structures were formed at the mesa-edge region in the InGaN-based light emitting diodes (LEDs). The HIP structures consisted of the top p-type GaN: Mg layers and the bottom InGaN active layers, and they were fabricated through a bandgap-selective photoelectrochemical (PEC) wet-etching process in a 2.2 M potassium hydroxide solution. In the HIP-LED structures, the light output power was 1.6 times higher and the divergent angle was reduced to 146 degrees compared to a standard LED without PEC treatment. The light emission extracted from the InGaN active layer was scattered in a normal direction through the hexagonal inverted pyramid structures located at the 10 mu m wide mesa-edge regions without depositing any transparent metal contact layer. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3089351] All rights reserved.
URI: http://hdl.handle.net/11455/43523
ISSN: 0013-4651
文章連結: http://dx.doi.org/10.1149/1.3089351
顯示於類別:材料科學與工程學系

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