請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43525
標題: InGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process
作者: Chen, K.T.
林佳鋒
Huang, W.C.
Hsieh, T.H.
Hsieh, C.H.
Lin, C.F.
關鍵字: nitride
diodes
期刊/報告no:: Optics Express, Volume 18, Issue 22, Page(s) 23406-23412.
摘要: InGaN-based light-emitting solar cell (LESC) structure with an inverted pyramidal structure at GaN/sapphire interface was fabricated through a laser decomposition process and a wet crystallographic etching process. The highest light output power of the laser-treated LESC structure, with a 56% backside roughened-area ratio, had a 75% enhancement compared to the conventional device at a 20 mA operating current. By increasing the backside roughened area, the cutoff wavelength of the transmittance spectra and the wavelength of the peak photovoltaic efficiency had a redshift phenomenon that could be caused by increasing the light absorption at InGaN active layer. (C) 2010 Optical Society of America
URI: http://hdl.handle.net/11455/43525
ISSN: 1094-4087
顯示於類別:材料科學與工程學系

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