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|標題:||Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier|
|期刊/報告no：:||Applied Physics Letters, Volume 98, Issue 21.|
|摘要:||The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show that quaternary LEDs exhibit 62% higher radiative recombination rate and low efficiency degradation of 13% at a high injection current. We attribute this improvement to increasing of carrier concentration and uniform redistribution of carriers. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3591967]|
|Appears in Collections:||材料科學與工程學系|
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