Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43528
標題: Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
作者: Tu, P.M.
武東星
Chang, C.Y.
Huang, S.C.
Chiu, C.H.
Chang, J.R.
Chang, W.T.
Wuu, D.S.
Zan, H.W.
Lin, C.C.
Kuo, H.C.
Hsu, C.P.
期刊/報告no:: Applied Physics Letters, Volume 98, Issue 21.
摘要: The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show that quaternary LEDs exhibit 62% higher radiative recombination rate and low efficiency degradation of 13% at a high injection current. We attribute this improvement to increasing of carrier concentration and uniform redistribution of carriers. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3591967]
URI: http://hdl.handle.net/11455/43528
ISSN: 0003-6951
文章連結: http://dx.doi.org/10.1063/1.3591967
Appears in Collections:材料科學與工程學系

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