Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43533
DC FieldValueLanguage
dc.contributor.authorHuang, S.Y.en_US
dc.contributor.author武東星zh_TW
dc.contributor.authorHorng, R.H.en_US
dc.contributor.authorTseng, P.H.en_US
dc.contributor.authorTu, J.H.en_US
dc.contributor.authorTu, L.W.en_US
dc.contributor.authorWuu, D.S.en_US
dc.date2010zh_TW
dc.date.accessioned2014-06-06T08:11:03Z-
dc.date.available2014-06-06T08:11:03Z-
dc.identifier.issn1041-1135zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/43533-
dc.description.abstractThis letter investigates the effects of hydrogen ion implantation on the characteristics of InGaN-based green resonantcavity light-emitting diodes (RCLEDs). RCLEDs with ion implantation were fabricated by implanting hydrogen ion (H(+)) in a selective area. The implanted region was used to form current-confinement layers due to an existing deep-level (similar to 512 nm, 2.4 eV). Superior directionality was also obtained because the selective area of p-GaN layer of RCLEDs with ion implantation provided a low refractive index. The light emission enhancement was due to the high current density increasing and the total reflection of the emission ray. The electroluminescence spectrum exhibited narrow fullwidth at half-maximum of 45 nm for the RCLEDs with ion implantation. The fiber-coupled power of RCLEDs with H implantation was 2.2 times greater than that of a similar structure without H implantation at an injection current of 20 mA.en_US
dc.language.isoen_USzh_TW
dc.relationIeee Photonics Technology Lettersen_US
dc.relation.ispartofseriesIeee Photonics Technology Letters, Volume 22, Issue 6, Page(s) 404-406.en_US
dc.relation.urihttp://dx.doi.org/10.1109/lpt.2010.2040777en_US
dc.subjectHydrogen-ion implantationen_US
dc.subjectInGaNen_US
dc.subjectresonant-cavity light-emitting diodeen_US
dc.subject(RCLED)en_US
dc.subjectmicrocavityen_US
dc.subjectemissionen_US
dc.subjectledsen_US
dc.titleStudy on Hydrogen Ion-Implanted Characteristic of Thin-Film Green Resonant-Cavity Light-Emitting Diodesen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1109/lpt.2010.2040777zh_TW
Appears in Collections:材料科學與工程學系
文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.