請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43535
標題: Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells
作者: Lin, Y.S.
武東星
Lien, S.Y.
Wang, C.C.
Hsu, C.H.
Yang, C.H.
Nautiyal, A.
Wuu, D.S.
Tsai, P.C.
Lee, S.J.
期刊/報告no:: International Journal of Photoenergy.
摘要: The amorphous silicon/amorphous silicon (a-Si/a-Si) tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p(+) recombination layer and i(2)/i(1) thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (V(oc)) of 1.59 V, short-circuit current density (J(sc)) of 7.96 mA/cm(2), and a fill factor (FF) of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p(+) recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.
URI: http://hdl.handle.net/11455/43535
ISSN: 1110-662X
文章連結: http://dx.doi.org/10.1155/2011/264709
顯示於類別:材料科學與工程學系

文件中的檔案:
沒有與此文件相關的檔案。


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。