Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43537
標題: Improved output power of 400-nm InGaN/AlGaN LEDs using a novel surface roughening technique
作者: Huang, S.C.
武東星
Wuu, D.S.
Wu, P.Y.
Lin, W.Y.
Tu, P.M.
Yeh, Y.C.
Hsu, C.P.
Chan, S.H.
關鍵字: Surface
Metalorganic chemical vapor deposition
Nitrides
Light
emitting diodes
light-emitting-diodes
gan-based leds
mqw leds
ingan
efficiency
layers
期刊/報告no:: Journal of Crystal Growth, Volume 311, Issue 3, Page(s) 867-870.
摘要: Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) with three kinds of naturally textured surfaces were grown by atmosphere-pressure metalorganic chemical vapor deposition. The electroluminescence intensities of the 400-nm LED bare chips with nano-hole and micro-island textured morphologies show 30% and 40%. in magnitude higher than that of the flat surface LED sample. Both textured surfaces greatly increased the escape probability of photons inside the LED structure. A naturally coral like surface was developed for the near-UV LED, where the textured p-GaN layer was fabricated using the successive growth of the micro-island followed by the nano-hole p-GaN layers. As much as 31.6% increased light Output power of the coral-like textured LED was achieved using this novel surface roughening technique. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43537
ISSN: 0022-0248
文章連結: http://dx.doi.org/10.1016/j.jcrysgro.2008.09.104
Appears in Collections:材料科學與工程學系

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