Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43546
標題: Growth and characterization of polycrystalline Si films prepared by hot-wire chemical vapor deposition
作者: Wuu, D.S.
武東星
Lien, S.Y.
Mao, H.Y.
Wu, B.R.
Hsieh, I.C.
Yao, P.C.
Wang, J.H.
Chen, W.C.
關鍵字: hot-wire chemical vapor deposition
poly-Si
hydrogen content
Raman
scattering
amorphous-silicon
raman-scattering
hydrogen
decomposition
quality
silane
期刊/報告no:: Thin Solid Films, Volume 498, Issue 1-2, Page(s) 9-13.
摘要: Hot-wire chemical vapor deposition is a promising method to deposit polycrystalline silicon (poly-Si) at a high deposition rate while maintaining a good material quality. In this paper, the effects of the hydrogen dilution ratio and substrate temperature on the film properties were investigated. Microstructures of the poly-Si films with different deposition parameters have been characterized by Raman scattering, Fourier transform infrared spectroscopy, and transmission electron microscopy. An enhancement in crystallinity was found when the hydrogen dilution ratio and substrate temperature increased. The hydrogen content in the film also decreased when both the hydrogen dilution ratio and substrate temperature increased. Under optimum conditions, the poly-Si film with a grain size of similar to 0.8 mu m and an electron mobility of similar to 28 cm(2)/V s was obtained. These poly-Si thin films have high potential in future low-cost photovoltaic devices. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43546
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2005.07.054
Appears in Collections:材料科學與工程學系

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