Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43546
DC FieldValueLanguage
dc.contributor.authorWuu, D.S.en_US
dc.contributor.author武東星zh_TW
dc.contributor.authorLien, S.Y.en_US
dc.contributor.authorMao, H.Y.en_US
dc.contributor.authorWu, B.R.en_US
dc.contributor.authorHsieh, I.C.en_US
dc.contributor.authorYao, P.C.en_US
dc.contributor.authorWang, J.H.en_US
dc.contributor.authorChen, W.C.en_US
dc.date2006zh_TW
dc.date.accessioned2014-06-06T08:11:05Z-
dc.date.available2014-06-06T08:11:05Z-
dc.identifier.issn0040-6090zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/43546-
dc.description.abstractHot-wire chemical vapor deposition is a promising method to deposit polycrystalline silicon (poly-Si) at a high deposition rate while maintaining a good material quality. In this paper, the effects of the hydrogen dilution ratio and substrate temperature on the film properties were investigated. Microstructures of the poly-Si films with different deposition parameters have been characterized by Raman scattering, Fourier transform infrared spectroscopy, and transmission electron microscopy. An enhancement in crystallinity was found when the hydrogen dilution ratio and substrate temperature increased. The hydrogen content in the film also decreased when both the hydrogen dilution ratio and substrate temperature increased. Under optimum conditions, the poly-Si film with a grain size of similar to 0.8 mu m and an electron mobility of similar to 28 cm(2)/V s was obtained. These poly-Si thin films have high potential in future low-cost photovoltaic devices. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationThin Solid Filmsen_US
dc.relation.ispartofseriesThin Solid Films, Volume 498, Issue 1-2, Page(s) 9-13.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.tsf.2005.07.054en_US
dc.subjecthot-wire chemical vapor depositionen_US
dc.subjectpoly-Sien_US
dc.subjecthydrogen contenten_US
dc.subjectRamanen_US
dc.subjectscatteringen_US
dc.subjectamorphous-siliconen_US
dc.subjectraman-scatteringen_US
dc.subjecthydrogenen_US
dc.subjectdecompositionen_US
dc.subjectqualityen_US
dc.subjectsilaneen_US
dc.titleGrowth and characterization of polycrystalline Si films prepared by hot-wire chemical vapor depositionen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.tsf.2005.07.054zh_TW
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