Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43554
標題: Tungsten filament effect on electronic properties of hot-wire CVD silicon films for heterojunction solar cell application
作者: Lien, S.Y.
武東星
Tseng, M.C.
Chao, C.H.
Weng, K.W.
Yu, H.H.
Wuu, D.S.
關鍵字: Hot-wire chemical vapor deposition
Amorphous silicon
Wire ageing
Solar cells
hydrogenated amorphous-silicon
microcrystalline silicon
thin-films
si
films
deposition
quality
期刊/報告no:: Thin Solid Films, Volume 517, Issue 17, Page(s) 4720-4723.
摘要: In this study, we describe the correlation between cell efficiency and wire aging during hot-wire chemical vapor deposition in detail. The new and aged tungsten (W) filaments were used to deposit the n-type microcrystalline silicon (mu c-Si) films for heterojunction (HJ) Si solar cell applications. Tungsten silicide (WSi(x)) was coated on the W catalyzer surface (center and end regions) after each deposition. and which was investigated and determined by scanning electron microscopy and electron probe microanalysis. The wire age has an effect on the resulting electronic properties of the grown film, thought to be related to differences in dark conductivity with aged versus new wires. It was found that the aging process is related to the formation of a silicide at the surface. A limited amount of silicon was observed in the bulk of catalyzer, suggesting that silicon diffusion into the wire has occurred. The original single-side HJ solar cell with efficiency of 15.3% has been fabricated using the new wires. The quality of n-type pc-Si films and efficiency of HJ solar cells were reduced when the aged W filament was employed. The quality of silicon films and the efficiency of HJ solar cell could be improved after regeneration process. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43554
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2009.03.077
Appears in Collections:材料科學與工程學系

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