請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43566
標題: 10-nm-thick quinary (AlCrTaTiZr)N film as effective diffusion barrier for Cu interconnects at 900 degrees C
作者: Chang, S.Y.
張守一
Chen, D.S.
關鍵字: aluminium compounds
chemical interdiffusion
chromium compounds
copper
diffusion barriers
elemental semiconductors
integrated circuit
interconnections
MIS structures
nanocomposites
silicon
tantalum
compounds
thin films
titanium compounds
zirconium compounds
entropy alloy system
multiprincipal elements
metallization
ta
si
performance
microstructure
期刊/報告no:: Applied Physics Letters, Volume 94, Issue 23.
摘要: In this study, an ultrathin quinary nitride film (AlCrTaTiZr)N of only 10 nm thick has been developed as a diffusion barrier layer for Cu interconnects. The (AlCrTaTiZr)N nanocomposite film was constructed of nanocrystallites embedded in an amorphous matrix. At an extremely high temperature of 900 degrees C, the Si/(AlCrTaTiZr)N/Cu film stack remained thermally stable. Neither interdiffusion between Si and Cu through the (AlCrTaTiZr)N layer nor formation of any silicides occurred. The nanocomposite structure and severe lattice distortions attributed to the addition of multiple elements were expected as the dominant factors for the superior diffusion resistance of the (AlCrTaTiZr)N film.
URI: http://hdl.handle.net/11455/43566
ISSN: 0003-6951
文章連結: http://dx.doi.org/10.1063/1.3155196
顯示於類別:材料科學與工程學系

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