請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43571
標題: Assembled GaN : Mg inverted hexagonal pyramids formed through a photoelectrochemical wet-etching process
作者: Lin, C.F.
張守一
Dai, J.J.
Yang, Z.J.
Zheng, J.H.
Chang, S.Y.
關鍵字: gallium nitride
room-temperature
nanorods
growth
期刊/報告no:: Electrochemical and Solid State Letters, Volume 8, Issue 12, Page(s) C185-C188.
摘要: In this research, small self-assembled inverted hexagonal pyramids of GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were formed using photoelectrochemical wet etching. We studied the formation mechanism of the pyramids during the etching process sequentially as lateral etching, bottom-up etching, and anisotropic etching. The (0001) Ga-face and {1011} faces were exposed to achieve the lowest possible surface energy. Due to the strain relief in the tips of the inverted nanopyramids with an MQW active region, an emission peak of photoluminescence with a strong blue shift of 252 meV was induced. (c) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11455/43571
ISSN: 1099-0062
文章連結: http://dx.doi.org/10.1149/1.2077027
顯示於類別:材料科學與工程學系

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