請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43582
標題: Curing process window and thermal stability of porous MSQ-based low-dielectric-constant materials
作者: Chang, S.Y.
張守一
Chou, T.J.
Lu, Y.C.
Jang, S.M.
Lin, S.J.
Liang, M.S.
關鍵字: ulsi multilevel interconnections
chemically bonded porogens
spin-on-glass
interlayer dielectrics
mechanical-properties
room-temperature
vapor-deposition
low-k
films
methylsilsesquioxane
期刊/報告no:: Journal of the Electrochemical Society, Volume 151, Issue 6, Page(s) F146-F152.
摘要: The curing process window and properties of both nitrogen (N-2) and ammonia (NH3) cured porous methyl silsesquioxane (MSQ) based low-dielectric-constant (low-k) spin-on dielectric (SOD) films are comprehensively explored and compared in this research. Higher curing temperatures, longer curing time, and an NH3 atmosphere provide more complete poragen removal and H-OR/H-OH hydration, and thus achieve higher degrees of cross-linking and volume shrinkage of these films. The desorption of water and ethylic organics confirms the release of hydrated ROH/H2O and is dominated by the curing temperatures. Smaller refractive indexes, better electrical properties, and stronger mechanical properties are obtained with NH3 curing and increased curing temperatures and time because of more complete hydration. With consideration of total thermal budget, the appropriate curing process window locates at 350degreesC for only 10 min or 300degreesC for 20-30 min with N-2/NH3 flows of 10/0.1-10/2.0 slm. All the properties do not degrade with extended thermal-cycle treatments, exhibiting good thermal stability. (C) 2004 The Electrochemical Society.
URI: http://hdl.handle.net/11455/43582
ISSN: 0013-4651
文章連結: http://dx.doi.org/10.1149/1.1731520
顯示於類別:材料科學與工程學系

文件中的檔案:
沒有與此文件相關的檔案。


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。