請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43610
標題: Analyses of interface adhesion between porous SiO2 low-k film and SiC/SiN layers by nanoindentation and nanoscratch tests
作者: 張守一
Chang, S.Y.
Huang, Y.C.
關鍵字: dielectrics
bonding configuration
interface adhesion
dielectric-constant materials
thin-films
mechanical-properties
thermal-stability
indentation
toughness
coatings
silk
load
期刊/報告no:: Microelectronic Engineering, Volume 84, Issue 2, Page(s) 319-327.
摘要: In this study, the interface adhesion between porous SiO2 low-dielectric-constant film and SiN capping layer as well as SiC etch stop layer has been investigated. The SiN capping layer was found mostly composed of Si to N bonds, and the porous SiO2 film composed of Si to O bonds. Elements of Si, O, and N constructed an interlayer mixing region of about 20 nm at the interface between the porous SiO2 film and SiN capping layer. Under nanoindentation and nanoscratch tests, interface delamination between the porous SiO2 film and both SiN capping layer and SiC etch stop layer occurred around the indented regions, and the interface adhesion strengths were accordingly obtained. The interface adhesion energy between the porous SiO2 film and SiN capping layer was measured as about 3.7 and 0.9 J/m(2) by nanoindentation and nanoscratch tests, respectively, and that between the porous SiO2 film and SiC etch stop layer was about 8.3 and 1.2 j/m(2). (c) 2006 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43610
ISSN: 0167-9317
文章連結: http://dx.doi.org/10.1016/j.mee.2006.10.086
顯示於類別:材料科學與工程學系

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