請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43614
標題: Effect of plasma treatments on interface chemistry and adhesion strength between porous SiO2 low-k film and SiC/SiN layers
作者: 張守一
Chang, S.Y.
Huang, Y.C.
關鍵字: dielectrics
bonding configuration
interface adhesion
dielectric-constant materials
thin-films
mechanical-properties
thermal-stability
nanoindentation
indentation
toughness
coatings
期刊/報告no:: Microelectronic Engineering, Volume 85, Issue 2, Page(s) 332-338.
摘要: In this study, the interface chemistry and adhesion strengths between porous SiO2, low-dielectric-constant film and SiN capping layer as well as SiC etch stop layer have been investigated under different plasma treatments. Elements of Si, O,and N constructed an interlayer region with mixing Si-N and Si-O bonds at the interface between the porous SiO2 film and SiN capping layer. After plasma treatments especially O-2 plasma, the oxygen content at the interface increased, and the binding energy obviously shifted to a higher level. Under nanoindentation and nanoscratch tests, interface delamination occurred, and the interface adhesion strength was accordingly measured. After plasma treatments especially the O-2 plasma, more Si-O bonds of high binding energy existed at the interface, and thus the interface adhesion strength was effectively improved. The adhesion energy Of SiO2/SiN and SiC/SiO2 interfaces was enhanced to 4.7 and 10.5 J/m(2) measured by nanoindentation test, and to 1.3 and 2.0 J/m(2) by nanoscratch test, respectively. (c) 2007 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43614
ISSN: 0167-9317
文章連結: http://dx.doi.org/10.1016/j.mee.2007.07.007
顯示於類別:材料科學與工程學系

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