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標題: The self-assemble GaN : Mg inverted hexagonal pyramids formatted by photoelectrochemical wet-etching process
作者: Lin, C.F.
Yang, Z.J.
Dai, J.J.
Zheng, J.H.
Chang, S.Y.
關鍵字: GaN : Mg
inverted hexagonal pyramid
wet etching
gallium nitride
期刊/報告no:: Thin Solid Films, Volume 515, Issue 10, Page(s) 4492-4495.
摘要: Small sized self-assembled inverted hexagonal pyramids consisting of GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were formed using photoelectrochemical wet etching. Lateral etching, bottom-up etching, and anisotropic etching are the formation mechanism of the pyramids during the etching process sequentially. The dimension of these inverted hexagonal pyramids was measured as 245 mn in width and 184 nm in height, and the angle between the top GaN:Mg surface and the pyramid sidewall was calculated at about 56.3 degrees. Due to the strain relief in the nano-disk MQW structure we induced an emission peak of photoluminescence at the tip of the inverted hexagonal pyramid which had a strong blue shift of 244 meV at 100 K. (c) 2006 Published by Elsevier B.V.
ISSN: 0040-6090
Appears in Collections:材料科學與工程學系



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