Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43639
DC FieldValueLanguage
dc.contributor.authorHsu, H.F.en_US
dc.contributor.author許薰丰zh_TW
dc.contributor.authorWu, H.Y.en_US
dc.contributor.authorHuang, Y.T.en_US
dc.contributor.authorChen, T.H.en_US
dc.date2009zh_TW
dc.date.accessioned2014-06-06T08:11:16Z-
dc.date.available2014-06-06T08:11:16Z-
dc.identifier.issn0021-4922zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/43639-
dc.description.abstractIron silicide particles were grown on Si(100) by reactive deposition epitaxy. By maintaining the thickness of the deposited Fe down to 2 nm, silicide particles with diameters of less than 100 nrn were formed on Si(I 00) substrates. Type B FeSi(CsCI) or gamma-FeSi(2) nanoparticles and a few beta-FeSi(2) nanoparticles were formed at 500 degrees C. Type A and B gamma-FeSi(2), alpha-FeSi(2), and beta-FeSi(2) nanoparticles coexisted in the samples deposited at 600 degrees C. The alpha-FeSi(2) phase was predominant in the sample that was deposited at 700 degrees C. Among these iron silicide nanoparticles, alpha-FeSi(2) and beta-FeSi(2) nanoparticles tended to protrude out of the Si substrate and FeSi(CsCI) and gamma-FeSi(2) nanoparticles preferred to embed in the Si substrate. The mechanism of the formation of a faceted nanoparticle was discussed on the basis of the minimization of total surface energy. (C) 2009 The Japan Society of Applied Physicsen_US
dc.language.isoen_USzh_TW
dc.relationJapanese Journal of Applied Physicsen_US
dc.relation.ispartofseriesJapanese Journal of Applied Physics, Volume 48, Issue 8.en_US
dc.relation.urihttp://dx.doi.org/10.1143/jjap.48.08jb09en_US
dc.subjectbeam-synthesized beta-fesi2en_US
dc.subjectlight-emitting diodeen_US
dc.subjectmu-men_US
dc.subjectsi substrateen_US
dc.subjectelectroluminescenceen_US
dc.subjectphotoluminescenceen_US
dc.subjectfilmsen_US
dc.subjectaggregationen_US
dc.subjectfesi2en_US
dc.titleStructural Properties of Iron Silicide Nanostructures Grown by Reactive Deposition Epitaxyen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1143/jjap.48.08jb09zh_TW
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