Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43641
標題: Growth of high-density titanium silicide nanowires in a single direction on a silicon surface
作者: Hsu, H.C.
許薰丰
Wu, W.W.
Hsu, H.F.
Chen, L.J.
關鍵字: heterostructures
temperature
si(111)
期刊/報告no:: Nano Letters, Volume 7, Issue 4, Page(s) 885-889.
摘要: Understanding the growth mechanisms of nanowires is essential for their successful implementation in advanced devices applications. In situ ultrahigh-vacuum transmission electron microscopy has been applied to elucidate the interaction mechanisms of titanium disilicide nanowires (TiSi2 NWs) on Si(111) substrate. Two phenomena were observed: merging of the two NWs in the same direction, and collapse of one NW on a competing NW in a different direction when they meet at the ends. On the other hand, as one NW encounters the midsection of the other NW in a different direction, it recedes in favor of bulging of the other NW at the midsection. Since crystallographically the nanowires are favored to grow on Si(110) only in the [1 -1 0] direction, this crucial information has been fruitfully exploited to focus on the growth of a high density of long and high-aspect-ratio Ti silicide NWs parallel to the surface on Si(110) in a single direction. The achievement in growth of high-density NWs in a single direction represents a significant advance in realizing the vast potential for applications of silicide NWs in nanoelectronics devices.
URI: http://hdl.handle.net/11455/43641
ISSN: 1530-6984
文章連結: http://dx.doi.org/10.1021/nl062465e
Appears in Collections:材料科學與工程學系

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