Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43643
標題: Effect of P addition on the thermal stability and electrical characteristics of NiSi films
作者: Hsu, H.F.
許薰丰
Tsai, C.L.
Chan, H.Y.
Chen, T.H.
關鍵字: Electroless deposition
Silicide
Thermal stability
nickel silicides
thin
interlayer
silicon
deposition
(111)si
phase
期刊/報告no:: Thin Solid Films, Volume 518, Issue 5, Page(s) 1538-1542.
摘要: Immersion Ni-P deposition is undoubtedly one of the most important catalytic deposition process, due to its simplicity in operation and low equipment cost. In this study, immersion deposited Ni-P films were used to form Ni-silicide films. Ni-P films with a thickness of 100 nm were fabricated by immersing Si(100) substrates in an aqueous deposition solution. Ni-silicide films were then formed by annealing the samples in a furnace at temperatures ranging from 400 degrees C to 900 degrees C for 1 h in an argon ambient. Experimental results indicate that a phosphor addition in Ni films increased the transformation temperature of NiSi to NiSi(2) to 900 degrees C. Moreover, the feasibility of enhancing the thermal stability of NiSi by varying the interface energy at the NiSi(2)/Si interface and the surface energy of a Ni-P-Si capping layer on the NiSi surface is discussed. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43643
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2009.09.058
Appears in Collections:材料科學與工程學系

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