Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43643
DC FieldValueLanguage
dc.contributor.authorHsu, H.F.en_US
dc.contributor.author許薰丰zh_TW
dc.contributor.authorTsai, C.L.en_US
dc.contributor.authorChan, H.Y.en_US
dc.contributor.authorChen, T.H.en_US
dc.date2009zh_TW
dc.date.accessioned2014-06-06T08:11:16Z-
dc.date.available2014-06-06T08:11:16Z-
dc.identifier.issn0040-6090zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/43643-
dc.description.abstractImmersion Ni-P deposition is undoubtedly one of the most important catalytic deposition process, due to its simplicity in operation and low equipment cost. In this study, immersion deposited Ni-P films were used to form Ni-silicide films. Ni-P films with a thickness of 100 nm were fabricated by immersing Si(100) substrates in an aqueous deposition solution. Ni-silicide films were then formed by annealing the samples in a furnace at temperatures ranging from 400 degrees C to 900 degrees C for 1 h in an argon ambient. Experimental results indicate that a phosphor addition in Ni films increased the transformation temperature of NiSi to NiSi(2) to 900 degrees C. Moreover, the feasibility of enhancing the thermal stability of NiSi by varying the interface energy at the NiSi(2)/Si interface and the surface energy of a Ni-P-Si capping layer on the NiSi surface is discussed. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationThin Solid Filmsen_US
dc.relation.ispartofseriesThin Solid Films, Volume 518, Issue 5, Page(s) 1538-1542.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.tsf.2009.09.058en_US
dc.subjectElectroless depositionen_US
dc.subjectSilicideen_US
dc.subjectThermal stabilityen_US
dc.subjectnickel silicidesen_US
dc.subjectthinen_US
dc.subjectinterlayeren_US
dc.subjectsiliconen_US
dc.subjectdepositionen_US
dc.subject(111)sien_US
dc.subjectphaseen_US
dc.titleEffect of P addition on the thermal stability and electrical characteristics of NiSi filmsen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.tsf.2009.09.058zh_TW
Appears in Collections:材料科學與工程學系
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