Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43645
標題: Mechanism of immersion deposition of Ni-P films on Si(100) in an aqueous alkaline solution containing sodium hypophosphite
作者: Hsu, H.F.
許薰丰
Tsai, C.L.
Lee, C.W.
Wu, H.Y.
關鍵字: Immersion deposition
Oxidation
Nickel
Silicon
Deposition mechanism
electroless deposition
chemical-deposition
room-temperature
silicon
nickel
surface
chemisorption
wafers
h2o
期刊/報告no:: Thin Solid Films, Volume 517, Issue 17, Page(s) 4786-4791.
摘要: The immersion deposition of Ni-P films on Si(100) surface without prior activation by metallic catalytic was carried out in an aqueous alkaline solution containing sodium hypophosphite. The deposition mechanism was investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Two stages of deposition were observed when the Si substrate was immersed in the deposition solution at an appropriate pH value. In the first stage, crystalline Ni nanoparticles were formed through a galvanic displacement reaction, which accompanied the oxidation of Si substrate without involving the reducing agent NaH(2)PO(2). Experimental results indicate that the oxidation states of Si(4+) and Si(3+) exist in the oxide layer. The amount of suboxide, Si(3+), increased with deposition time, and the oxide layer became activated. In the second stage, amorphous Ni-P was deposited on this activation oxide layer in a process involving the reducing agent. The microscopic structure of the deposition film observed by TEM cross-sectional analysis, verifies the mechanism of deposition suggested in this study. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43645
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2009.03.034
Appears in Collections:材料科學與工程學系

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